SGT60U65FD1PN Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGT60U65FD1PN  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 280 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 160 nS

Coesⓘ - Capacitancia de salida, typ: 132 pF

Encapsulados: TO3P

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SGT60U65FD1PN datasheet

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SGT60U65FD1PN

Silan Microelectronics SGT60U65FD1PN(PT)(P7)_Datasheet 60A, 650V FIELD STOP IGBT DESCRIPTION C 2 The SGT60U65FD1PN(PT)(P7) field stop IGBT adopts Silan Field Stop 1 IV+ technology, features low conduction loss and switching loss, is G applicable to UPS, SMPS and PFC fields. FEATURES 3 E 60A, 650V, VCE(sat)(typ.)=2.0V@IC=60A Low conduction loss Fast switchin

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SGT60U65FD1PN

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SGT60U65FD1PN

SGT60T65FD1P7/PN/PS/PT 60A 650V C 2 SGT60T65FD1P7/PN/PS/PT Field 1 G Stop UPS SMPS PFC 1 3 2 3 TO-3P E 60A 650V VCE(sat)( )=2.2V@IC=60A

 9.2. Size:326K  silan
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SGT60U65FD1PN

SGT60N60FD1PN/P7 60A 600V C 2 SGT60N60FD1PN/P7 Field Stop 1 G UPS,SMPS PFC 3 E 60A 600V VCE(sat)( )=2.2V@IC=60A

MOSTRAR MÁS

Otros transistores... HIA50N65H-JA, HIA50N65T-SA, HIA50N65H-SA, HIA50N65IH-JA, HIA20N140IH-DA, GT30F122, SG40T120DB, SG60T120UDB3, YGW50N65F1A, SGT60U65FD1PT, OST120N65H4SMF, OST120N65H4UMF, OST120N65H5SMF, OST120N65HEMF, OST15N65DRF, OST15N65FRF, OST15N65KRF