SGT60U65FD1PT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGT60U65FD1PT
Tipo de transistor: IGBT + Diode
Código de marcado: 60U65FD1
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 280 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 160 nS
Coesⓘ - Capacitancia de salida, typ: 132 pF
Qgⓘ - Carga total de la puerta, typ: 210 nC
Paquete / Cubierta: TO247
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SGT60U65FD1PT Datasheet (PDF)
sgt60u65fd1pn sgt60u65fd1pt.pdf
SilanMicroelectronicsSGT60U65FD1PN(PT)(P7)_Datasheet 60A, 650V FIELD STOP IGBT DESCRIPTION C2The SGT60U65FD1PN(PT)(P7) field stop IGBT adopts Silan Field Stop 1IV+ technology, features low conduction loss and switching loss, is Gapplicable to UPS, SMPS and PFC fields. FEATURES 3E 60A, 650V, VCE(sat)(typ.)=2.0V@IC=60A Low conduction loss Fast switchin
sgt60u65fd1pn sgt60u65fd1pt sgt60u65fd1p7.pdf
SGT60U65FD1PN(PT)(P7) 60A650V C 2SGT60U65FD1PN(PT)(P7)1G 4 PlusField Stop IV+ UPSSMPS PFC 3 E 60A650VVCE(sat)( )=2.0V@IC=60A
sgt60t65fd1pn sgt60t65fd1p7 sgt60t65fd1ps sgt60t65fd1pt.pdf
SGT60T65FD1P7/PN/PS/PT 60A650V C 2SGT60T65FD1P7/PN/PS/PT Field 1GStop UPSSMPS PFC 1323TO-3PE 60A650VVCE(sat)( )=2.2V@IC=60A
sgt60n60fd1pn sgt60n60fd1p7.pdf
SGT60N60FD1PN/P7 60A600V C 2SGT60N60FD1PN/P7 Field Stop1G UPS,SMPS PFC 3 E 60A600VVCE(sat)( )=2.2V@IC=60A
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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