OST15N65KRF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: OST15N65KRF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 36 nS
Coesⓘ - Capacitancia de salida, typ: 80 pF
Qgⓘ - Carga total de la puerta, typ: 73 nC
Paquete / Cubierta: TO263
Búsqueda de reemplazo de OST15N65KRF IGBT
OST15N65KRF Datasheet (PDF)
ost15n65krf.pdf

OST15N65KRF Enhancement Mode N-Channel Power IGBT General Description OST15N65KRF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost15n65drf.pdf

OST15N65DRF Enhancement Mode N-Channel Power IGBT General Description OST15N65DRF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost15n65frf.pdf

OST15N65FRF Enhancement Mode N-Channel Power IGBT General Description OST15N65FRF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost15n65prf.pdf

OST15N65PRF Enhancement Mode N-Channel Power IGBT General Description OST15N65PRF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
Otros transistores... SGT60U65FD1PN , SGT60U65FD1PT , OST120N65H4SMF , OST120N65H4UMF , OST120N65H5SMF , OST120N65HEMF , OST15N65DRF , OST15N65FRF , STGB10NB37LZ , OST15N65PRF , OST160N65H5MF , OST20N135HRF , OST25N65FMF , OST25N65PMF , OST30N65HMF , OST30N65KTXF , OST40N120HEMF .



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