OST15N65KRF datasheet, аналоги, основные параметры

Наименование: OST15N65KRF  📄📄 

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 250 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 30 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.65 V @25℃

tr ⓘ - Время нарастания типовое: 36 nS

Coesⓘ - Выходная емкость, типовая: 80 pF

Тип корпуса: TO263

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 Аналог (замена) для OST15N65KRF

- подбор ⓘ IGBT транзистора по параметрам

 

OST15N65KRF даташит

 ..1. Size:718K  oriental semi
 ost15n65krf.pdf pdf_icon

OST15N65KRF

OST15N65KRF Enhancement Mode N-Channel Power IGBT General Description OST15N65KRF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.1. Size:768K  oriental semi
 ost15n65drf.pdf pdf_icon

OST15N65KRF

OST15N65DRF Enhancement Mode N-Channel Power IGBT General Description OST15N65DRF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.2. Size:735K  oriental semi
 ost15n65frf.pdf pdf_icon

OST15N65KRF

OST15N65FRF Enhancement Mode N-Channel Power IGBT General Description OST15N65FRF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.3. Size:777K  oriental semi
 ost15n65prf.pdf pdf_icon

OST15N65KRF

OST15N65PRF Enhancement Mode N-Channel Power IGBT General Description OST15N65PRF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SGT60U65FD1PN, SGT60U65FD1PT, OST120N65H4SMF, OST120N65H4UMF, OST120N65H5SMF, OST120N65HEMF, OST15N65DRF, OST15N65FRF, YGW40N65F1A1, OST15N65PRF, OST160N65H5MF, OST20N135HRF, OST25N65FMF, OST25N65PMF, OST30N65HMF, OST30N65KTXF, OST40N120HEMF