OST30N65HMF Todos los transistores

 

OST30N65HMF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OST30N65HMF

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 188 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 42 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 40 nS

Coesⓘ - Capacitancia de salida, typ: 71 pF

Encapsulados: TO247

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OST30N65HMF datasheet

 ..1. Size:568K  oriental semi
 ost30n65hmf.pdf pdf_icon

OST30N65HMF

OST30N65HMF Enhancement Mode N-Channel Power IGBT General Description OST30N65HMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.1. Size:739K  oriental semi
 ost30n65ktxf.pdf pdf_icon

OST30N65HMF

OST30N65KTXF Enhancement Mode N-Channel Power IGBT General Description OST30N65KTXF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

Otros transistores... OST15N65DRF , OST15N65FRF , OST15N65KRF , OST15N65PRF , OST160N65H5MF , OST20N135HRF , OST25N65FMF , OST25N65PMF , MGD623S , OST30N65KTXF , OST40N120HEMF , OST40N120HMF , OST40N65HEMF , OST40N65HMF , OST40N65HXF , OST40N65KMF , OST40N65PMF .

History: F3L300R12ME4-B23 | F3L300R12PT4_B26 | F3L100R12W2H3-B11 | F3L300R12MT4-B22 | OST25N65FMF | F3L300R12ME4-B22

 

 

 

 

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