All IGBT. OST30N65HMF Datasheet

 

OST30N65HMF Datasheet and Replacement


   Type Designator: OST30N65HMF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 188 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 42 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 40 nS
   Coesⓘ - Output Capacitance, typ: 71 pF
   Package: TO247
      - IGBT Cross-Reference

 

OST30N65HMF Datasheet (PDF)

 ..1. Size:568K  oriental semi
 ost30n65hmf.pdf pdf_icon

OST30N65HMF

OST30N65HMF Enhancement Mode N-Channel Power IGBT General Description OST30N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 6.1. Size:739K  oriental semi
 ost30n65ktxf.pdf pdf_icon

OST30N65HMF

OST30N65KTXF Enhancement Mode N-Channel Power IGBT General Description OST30N65KTXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

Datasheet: OST15N65DRF , OST15N65FRF , OST15N65KRF , OST15N65PRF , OST160N65H5MF , OST20N135HRF , OST25N65FMF , OST25N65PMF , IRG4PC50U , OST30N65KTXF , OST40N120HEMF , OST40N120HMF , OST40N65HEMF , OST40N65HMF , OST40N65HXF , OST40N65KMF , OST40N65PMF .

History: AOTF5B65M2 | MMG300D120B6UC

Keywords - OST30N65HMF transistor datasheet

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