IXGH50N60A Todos los transistores

 

IXGH50N60A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGH50N60A
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 250 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7(max) V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 210 nS
   Coesⓘ - Capacitancia de salida, typ: 430 pF
   Qgⓘ - Carga total de la puerta, typ: 200 nC
   Paquete / Cubierta: TO247
 

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IXGH50N60A Datasheet (PDF)

 ..1. Size:64K  ixys
 ixgh50n60a.pdf pdf_icon

IXGH50N60A

IXGH50N60A VCES = 600 VHiPerFASTTM IGBTIXGH50N60ASIC25 = 75 ASurface MountableVCE(sat) = 2.7 Vtfi = 275 nsTO-247 SMDSymbol Test Conditions Maximum Ratings (50N60AS)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)GVGES Continuous 20 VEVGEM Transient 30 VIC25 TC = 25C75 ATO-247 ADIC90 TC = 90C50 A(50N60A)ICM TC = 2

 0.1. Size:64K  ixys
 ixgh50n60as.pdf pdf_icon

IXGH50N60A

IXGH50N60A VCES = 600 VHiPerFASTTM IGBTIXGH50N60ASIC25 = 75 ASurface MountableVCE(sat) = 2.7 Vtfi = 275 nsTO-247 SMDSymbol Test Conditions Maximum Ratings (50N60AS)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)GVGES Continuous 20 VEVGEM Transient 30 VIC25 TC = 25C75 ATO-247 ADIC90 TC = 90C50 A(50N60A)ICM TC = 2

 5.1. Size:196K  ixys
 ixgh50n60c4d1.pdf pdf_icon

IXGH50N60A

VCES = 600VHigh-Gain IGBTs IXGQ50N60C4D1IC110 = 46Aw/ Diode IXGH50N60C4D1 VCE(sat) 2.3V High-Speed PT Trench IGBTsTO-3P (IXGQ)GCESymbol Test Conditions Maximum RatingsTabVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VTO-247 (IXGH)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 90 AIC110 TC = 110

 5.2. Size:218K  ixys
 ixgh50n60b4.pdf pdf_icon

IXGH50N60A

VCES = 600VHigh-Gain IGBTs IXGA50N60B4IC110 = 50AIXGP50N60B4 VCE(sat) 1.8V IXGH50N60B4Low-Vsat PT Trench IGBT TO-263 AA (IXGA)GEC (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC C (Tab)EIC25 TC = 25C 1

MOSTRAR MÁS

Otros transistores... IXGH39N60BD1 , IXGH39N60BS , IXGH40N30 , IXGH40N30S , IXGH40N30A , IXGH40N30B , IXGH40N30BD1 , IXGH41N60 , IRG4PC50U , IXGH50N60B , IXGH60N60 , IXGK120N60B , IXGK50N50BU1 , IXGK50N60AU1 , IXGK50N60B , IXGK50N60BD1 , IXGK50N60BU1 .

 

 
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