IXGH50N60A Todos los transistores

 

IXGH50N60A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGH50N60A

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 75

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 275

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO247

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IXGH50N60A Datasheet (PDF)

1.1. ixgh50n60b4d1.pdf Size:198K _ixys

IXGH50N60A
IXGH50N60A

VCES = 600V High-Gain IGBTs IXGH50N60B4D1 IC110 = 50A w/Diode IXGQ50N60B4D1 ≤ ≤ VCE(sat) ≤ 1.8V ≤ ≤ Low-Vsat PT Trench IGBTs TO-247 (IXGH) G C Tab E Symbol Test Conditions Maximum Ratings TO-3P (IXGQ) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C E IC25 TC = 25°C 100 A Tab IC

1.2. ixgh50n60b.pdf Size:181K _ixys

IXGH50N60A
IXGH50N60A

IXGH 50N60B HiPerFASTTM IGBT VCES = 600 V IXGK 50N60B IC25 = 75 A IXGT 50N60B VCE(sat) = 2.3 V IXGJ 50N60B tfi(typ) = 120 ns TO-247 AD (IXGH) C C (TAB) Symbol Test Conditions Maximum Ratings E VCES TJ = 25°C to 150°C 600 V TO-268 (D3) ( IXGT) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C (TAB) E IC25 TC = 25°C75 A TO-268 Le

 1.3. ixgh50n60b4.pdf Size:218K _ixys

IXGH50N60A
IXGH50N60A

VCES = 600V High-Gain IGBTs IXGA50N60B4 IC110 = 50A IXGP50N60B4 ≤ ≤ VCE(sat) ≤ 1.8V ≤ ≤ IXGH50N60B4 Low-Vsat PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C C (Tab) E IC25 TC = 25°C 1

1.4. ixgh50n60a.pdf Size:64K _ixys

IXGH50N60A
IXGH50N60A

IXGH50N60A VCES = 600 V HiPerFASTTM IGBT IXGH50N60AS IC25 = 75 A Surface Mountable VCE(sat) = 2.7 V tfi = 275 ns TO-247 SMD Symbol Test Conditions Maximum Ratings (50N60AS) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) G VGES Continuous ±20 V E VGEM Transient ±30 V IC25 TC = 25°C75 A TO-247 AD IC90 TC = 90°C50 A (50N60A) ICM TC = 2

 1.5. ixgh50n60c4.pdf Size:216K _ixys

IXGH50N60A
IXGH50N60A

VCES = 600V High-Gain IGBTs IXGA50N60C4 IC110 = 46A IXGP50N60C4 ≤ ≤ VCE(sat) ≤ 2.3V ≤ ≤ IXGH50N60C4 High-Speed PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C C (Tab) E IC25 TC = 25°C

1.6. ixgh50n60b2 ixgt50n60b2.pdf Size:585K _ixys

IXGH50N60A
IXGH50N60A

VCES = 600 V IXGH 50N60B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N60B2 VCE(sat) = 2.0 V tfi typ = 65 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E TO-268 IC25 TC = 25°C (limited by leads) 75 A (IXGT) IC11

1.7. ixgh50n60b2.pdf Size:583K _ixys

IXGH50N60A
IXGH50N60A

VCES = 600 V IXGH 50N60B2 HiPerFASTTM IGBT IC25 = 75 A B2-Class High Speed IGBTs IXGT 50N60B2 VCE(sat) = 2.0 V tfi typ = 65 ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E TO-268 IC25 TC = 25°C (limited by leads) 75 A (IXGT) IC11

1.8. ixgh50n60c2 ixgt50n60c2.pdf Size:586K _ixys

IXGH50N60A
IXGH50N60A

Advance Technical Data VCES = 600 V IXGH 50N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 50N60C2 VCE(sat) = 2.7 V tfi typ = 48 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E TO-268 IC25 TC = 25°C (limited by

1.9. ixgh50n60c4d1.pdf Size:196K _ixys

IXGH50N60A
IXGH50N60A

VCES = 600V High-Gain IGBTs IXGQ50N60C4D1 IC110 = 46A w/ Diode IXGH50N60C4D1 ≤ ≤ VCE(sat) ≤ 2.3V ≤ ≤ High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings Tab VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V TO-247 (IXGH) VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 90 A IC110 TC = 110

1.10. ixgh50n60c2.pdf Size:584K _ixys

IXGH50N60A
IXGH50N60A

Advance Technical Data VCES = 600 V IXGH 50N60C2 HiPerFASTTM IGBT IC25 = 75 A C2-Class High Speed IGBTs IXGT 50N60C2 VCE(sat) = 2.7 V tfi typ = 48 ns Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E TO-268 IC25 TC = 25°C (limited by

Otros transistores... IXGH39N60BD1 , IXGH39N60BS , IXGH39N60CD1 , IXGH40N30 , IXGH40N30A , IXGH40N30B , IXGH40N30BD1 , IXGH41N60 , STGW38IH130D , IXGH50N60B , IXGH60N60 , IXGK120N60B , IXGK50N50BU1 , IXGK50N60AU1 , IXGK50N60B , IXGK50N60BD1 , IXGK50N60BU1 .

 

 
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