IXGH50N60A
- IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IXGH50N60A
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ -
Максимальная рассеиваемая мощность: 250
W
|Vce|ⓘ -
Предельно-допустимое напряжение коллектор-эмиттер: 600
V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20
V
|Ic|ⓘ - Максимальный постоянный ток коллектора:
75
A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое:
2.7(max)
V @25℃
|VGEth|ⓘ -
Максимальное пороговое напряжение затвор-эмиттер: 5
V
Tjⓘ - Максимальная температура перехода:
150
℃
trⓘ -
Время нарастания типовое: 210
nS
Coesⓘ - Выходная емкость, типовая: 430
pF
Qgⓘ - Общий заряд затвора, typ: 200
nC
Тип корпуса:
TO247
Аналог (замена) для IXGH50N60A
IXGH50N60A
Datasheet (PDF)
..1. Size:64K ixys
ixgh50n60a.pdf 
IXGH50N60A VCES = 600 VHiPerFASTTM IGBTIXGH50N60ASIC25 = 75 ASurface MountableVCE(sat) = 2.7 Vtfi = 275 nsTO-247 SMDSymbol Test Conditions Maximum Ratings (50N60AS)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)GVGES Continuous 20 VEVGEM Transient 30 VIC25 TC = 25C75 ATO-247 ADIC90 TC = 90C50 A(50N60A)ICM TC = 2
0.1. Size:64K ixys
ixgh50n60as.pdf 
IXGH50N60A VCES = 600 VHiPerFASTTM IGBTIXGH50N60ASIC25 = 75 ASurface MountableVCE(sat) = 2.7 Vtfi = 275 nsTO-247 SMDSymbol Test Conditions Maximum Ratings (50N60AS)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)GVGES Continuous 20 VEVGEM Transient 30 VIC25 TC = 25C75 ATO-247 ADIC90 TC = 90C50 A(50N60A)ICM TC = 2
5.1. Size:196K ixys
ixgh50n60c4d1.pdf 
VCES = 600VHigh-Gain IGBTs IXGQ50N60C4D1IC110 = 46Aw/ Diode IXGH50N60C4D1 VCE(sat) 2.3V High-Speed PT Trench IGBTsTO-3P (IXGQ)GCESymbol Test Conditions Maximum RatingsTabVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VTO-247 (IXGH)VGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C 90 AIC110 TC = 110
5.2. Size:218K ixys
ixgh50n60b4.pdf 
VCES = 600VHigh-Gain IGBTs IXGA50N60B4IC110 = 50AIXGP50N60B4 VCE(sat) 1.8V IXGH50N60B4Low-Vsat PT Trench IGBT TO-263 AA (IXGA)GEC (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC C (Tab)EIC25 TC = 25C 1
5.3. Size:216K ixys
ixgh50n60c4.pdf 
VCES = 600VHigh-Gain IGBTs IXGA50N60C4IC110 = 46AIXGP50N60C4 VCE(sat) 2.3V IXGH50N60C4High-Speed PT Trench IGBT TO-263 AA (IXGA)GEC (Tab)TO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VC C (Tab)EIC25 TC = 25C
5.4. Size:585K ixys
ixgh50n60b2 ixgt50n60b2.pdf 
VCES = 600 VIXGH 50N60B2HiPerFASTTM IGBTIC25 = 75 AB2-Class High Speed IGBTs IXGT 50N60B2VCE(sat) = 2.0 Vtfi typ = 65 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by leads) 75 A (IXGT)IC11
5.5. Size:181K ixys
ixgh50n60b.pdf 
IXGH 50N60BHiPerFASTTM IGBT VCES = 600 VIXGK 50N60BIC25 = 75 AIXGT 50N60BVCE(sat) = 2.3 VIXGJ 50N60Btfi(typ) = 120 nsTO-247 AD (IXGH)C C (TAB)Symbol Test Conditions Maximum Ratings EVCES TJ = 25C to 150C 600 VTO-268 (D3) ( IXGT)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC25 TC = 25C75 ATO-268 Le
5.6. Size:584K ixys
ixgh50n60c2.pdf 
Advance Technical DataVCES = 600 VIXGH 50N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 50N60C2VCE(sat) = 2.7 Vtfi typ = 48 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by
5.7. Size:198K ixys
ixgh50n60b4d1.pdf 
VCES = 600VHigh-Gain IGBTs IXGH50N60B4D1IC110 = 50Aw/Diode IXGQ50N60B4D1 VCE(sat) 1.8V Low-Vsat PT Trench IGBTsTO-247 (IXGH)GC TabESymbol Test Conditions Maximum RatingsTO-3P (IXGQ)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VGVGEM Transient 30 VCEIC25 TC = 25C 100 ATabIC
5.8. Size:583K ixys
ixgh50n60b2.pdf 
VCES = 600 VIXGH 50N60B2HiPerFASTTM IGBTIC25 = 75 AB2-Class High Speed IGBTs IXGT 50N60B2VCE(sat) = 2.0 Vtfi typ = 65 nsSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by leads) 75 A (IXGT)IC11
5.9. Size:586K ixys
ixgh50n60c2 ixgt50n60c2.pdf 
Advance Technical DataVCES = 600 VIXGH 50N60C2HiPerFASTTM IGBTIC25 = 75 AC2-Class High Speed IGBTs IXGT 50N60C2VCE(sat) = 2.7 Vtfi typ = 48 nsSymbol Test Conditions Maximum Ratings TO-247 AD (IXGH)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGCVGEM Transient 30 VETO-268IC25 TC = 25C (limited by
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