OST40N120HMF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OST40N120HMF  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 357 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 56 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃

trⓘ - Tiempo de subida, typ: 88 nS

Coesⓘ - Capacitancia de salida, typ: 242 pF

Encapsulados: TO247

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OST40N120HMF datasheet

 ..1. Size:775K  oriental semi
 ost40n120hmf.pdf pdf_icon

OST40N120HMF

OST40N120HMF Enhancement Mode N-Channel Power IGBT General Description OST40N120HMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CE This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.1. Size:617K  oriental semi
 ost40n120hemf.pdf pdf_icon

OST40N120HMF

OST40N120HEMF Enhancement Mode N-Channel Power IGBT General Description OST40N120HEMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

 8.1. Size:704K  oriental semi
 ost40n65hmf.pdf pdf_icon

OST40N120HMF

OST40N65HMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CE This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 8.2. Size:701K  oriental semi
 ost40n65hxf.pdf pdf_icon

OST40N120HMF

OST40N65HXF Enhancement Mode N-Channel Power IGBT General Description OST40N65HXF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CE This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

MOSTRAR MÁS

Otros transistores... OST15N65PRF, OST160N65H5MF, OST20N135HRF, OST25N65FMF, OST25N65PMF, OST30N65HMF, OST30N65KTXF, OST40N120HEMF, AOK40B65H2AL, OST40N65HEMF, OST40N65HMF, OST40N65HXF, OST40N65KMF, OST40N65PMF, OST50N65H4EWF, OST50N65HEWF, OST50N65HF