Справочник IGBT. OST40N120HMF

 

OST40N120HMF Даташит. Аналоги. Параметры и характеристики.


   Наименование: OST40N120HMF
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 357 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 56 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.45 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.8 V
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   tr ⓘ - Время нарастания типовое: 88 nS
   Coesⓘ - Выходная емкость, типовая: 242 pF
   Qg ⓘ - Общий заряд затвора, typ: 214 nC
   Тип корпуса: TO247
 

 Аналог (замена) для OST40N120HMF

   - подбор ⓘ IGBT транзистора по параметрам

 

OST40N120HMF Datasheet (PDF)

 ..1. Size:775K  oriental semi
 ost40n120hmf.pdf pdf_icon

OST40N120HMF

OST40N120HMF Enhancement Mode N-Channel Power IGBT General Description OST40N120HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.1. Size:617K  oriental semi
 ost40n120hemf.pdf pdf_icon

OST40N120HMF

OST40N120HEMF Enhancement Mode N-Channel Power IGBT General Description OST40N120HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

 8.1. Size:704K  oriental semi
 ost40n65hmf.pdf pdf_icon

OST40N120HMF

OST40N65HMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 8.2. Size:701K  oriental semi
 ost40n65hxf.pdf pdf_icon

OST40N120HMF

OST40N65HXF Enhancement Mode N-Channel Power IGBT General Description OST40N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: FGB3245G2-F085 | IXGA16N60C2 | MIO1200-33E11 | IRG4BC40W | CY25AAJ-8F | SIGC05T60SNC | APT13GP120BG

 

 
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