OST40N120HMF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: OST40N120HMF
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Максимальная рассеиваемая мощность (Pc), W: 357
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
Максимальный постоянный ток коллектора |Ic| @25℃, A: 56
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.45
Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.8
Максимальная температура перехода (Tj), ℃: 175
Время нарастания типовое (tr), nS: 88
Емкость коллектора типовая (Cc), pf: 242
Общий заряд затвора (Qg), typ, nC: 214
Тип корпуса: TO247
Аналог (замена) для OST40N120HMF
OST40N120HMF Datasheet (PDF)
ost40n120hmf.pdf
OST40N120HMF Enhancement Mode N-Channel Power IGBT General Description OST40N120HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost40n120hemf.pdf
OST40N120HEMF Enhancement Mode N-Channel Power IGBT General Description OST40N120HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn
ost40n65hmf.pdf
OST40N65HMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost40n65hxf.pdf
OST40N65HXF Enhancement Mode N-Channel Power IGBT General Description OST40N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost40n65hemf.pdf
OST40N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST40N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost40n65kmf.pdf
OST40N65KMF Enhancement Mode N-Channel Power IGBT General Description OST40N65KMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost40n65pmf.pdf
OST40N65PMF Enhancement Mode N-Channel Power IGBT General Description OST40N65PMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
Другие IGBT... OST15N65PRF , OST160N65H5MF , OST20N135HRF , OST25N65FMF , OST25N65PMF , OST30N65HMF , OST30N65KTXF , OST40N120HEMF , GT30F126 , OST40N65HEMF , OST40N65HMF , OST40N65HXF , OST40N65KMF , OST40N65PMF , OST50N65H4EWF , OST50N65HEWF , OST50N65HF .
Список транзисторов
Обновления
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ