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OST60N65HEMF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OST60N65HEMF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 250 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 88 nS
   Coesⓘ - Capacitancia de salida, typ: 178 pF
   Paquete / Cubierta: TO247
 

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OST60N65HEMF Datasheet (PDF)

 ..1. Size:873K  oriental semi
 ost60n65hemf.pdf pdf_icon

OST60N65HEMF

OST60N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST60N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.1. Size:789K  oriental semi
 ost60n65h4ewf.pdf pdf_icon

OST60N65HEMF

 5.2. Size:817K  oriental semi
 ost60n65h4emf.pdf pdf_icon

OST60N65HEMF

 5.3. Size:733K  oriental semi
 ost60n65hxf.pdf pdf_icon

OST60N65HEMF

OST60N65HXF Enhancement Mode N-Channel Power IGBT General Description OST60N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

MOSTRAR MÁS

Otros transistores... OST50N65HF-D , OST50N65HM2F , OST50N65HMF , OST50N65HSNF , OST50N65HSZF , OST50N65HXF , OST50N65HZF , OST60N65H4EMF , GT60N321 , OST60N65HMF , OST60N65HSMF , OST60N65HSXF , OST60N65HSZF , OST60N65HXF , OST75N120HM2F , OST75N65HEM2F , OST75N65HEMF .

 

 
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