OST60N65HEMF Specs and Replacement
Type Designator: OST60N65HEMF
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 88 nS
Coesⓘ - Output Capacitance, typ: 178 pF
Package: TO247
OST60N65HEMF Substitution - IGBTⓘ Cross-Reference Search
OST60N65HEMF datasheet
ost60n65hemf.pdf
OST60N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST60N65HEMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol... See More ⇒
ost60n65hxf.pdf
OST60N65HXF Enhancement Mode N-Channel Power IGBT General Description OST60N65HXF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog... See More ⇒
Specs: OST50N65HF-D, OST50N65HM2F, OST50N65HMF, OST50N65HSNF, OST50N65HSZF, OST50N65HXF, OST50N65HZF, OST60N65H4EMF, IRG4PF50W, OST60N65HMF, OST60N65HSMF, OST60N65HSXF, OST60N65HSZF, OST60N65HXF, OST75N120HM2F, OST75N65HEM2F, OST75N65HEMF
Keywords - OST60N65HEMF transistor spec
OST60N65HEMF cross reference
OST60N65HEMF equivalent finder
OST60N65HEMF lookup
OST60N65HEMF substitution
OST60N65HEMF replacement
History: OST75N120HM2F
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE
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