OST60N65HMF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: OST60N65HMF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 375 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 85 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
trⓘ - Tiempo de subida, typ: 74 nS
Coesⓘ - Capacitancia de salida, typ: 185 pF
Encapsulados: TO247
Búsqueda de reemplazo de OST60N65HMF IGBT
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OST60N65HMF datasheet
ost60n65hmf.pdf
OST60N65HMF Enhancement Mode N-Channel Power IGBT General Description OST60N65HMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost60n65hxf.pdf
OST60N65HXF Enhancement Mode N-Channel Power IGBT General Description OST60N65HXF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
Otros transistores... OST50N65HM2F , OST50N65HMF , OST50N65HSNF , OST50N65HSZF , OST50N65HXF , OST50N65HZF , OST60N65H4EMF , OST60N65HEMF , IRG4PC40W , OST60N65HSMF , OST60N65HSXF , OST60N65HSZF , OST60N65HXF , OST75N120HM2F , OST75N65HEM2F , OST75N65HEMF , OST75N65HLMF .
History: NCE40ED120VTP
History: NCE40ED120VTP
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