All IGBT. OST60N65HMF Datasheet

 

OST60N65HMF IGBT. Datasheet pdf. Equivalent


   Type Designator: OST60N65HMF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 85 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 74 nS
   Coesⓘ - Output Capacitance, typ: 185 pF
   Qgⓘ - Total Gate Charge, typ: 104 nC
   Package: TO247

 OST60N65HMF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

OST60N65HMF Datasheet (PDF)

 ..1. Size:746K  oriental semi
ost60n65hmf.pdf

OST60N65HMF
OST60N65HMF

OST60N65HMF Enhancement Mode N-Channel Power IGBT General Description OST60N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.1. Size:789K  oriental semi
ost60n65h4ewf.pdf

OST60N65HMF
OST60N65HMF

 5.2. Size:817K  oriental semi
ost60n65h4emf.pdf

OST60N65HMF
OST60N65HMF

 5.3. Size:733K  oriental semi
ost60n65hxf.pdf

OST60N65HMF
OST60N65HMF

OST60N65HXF Enhancement Mode N-Channel Power IGBT General Description OST60N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.4. Size:606K  oriental semi
ost60n65hsmf.pdf

OST60N65HMF
OST60N65HMF

OST60N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST60N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.5. Size:873K  oriental semi
ost60n65hemf.pdf

OST60N65HMF
OST60N65HMF

OST60N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST60N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.6. Size:838K  oriental semi
ost60n65hszf.pdf

OST60N65HMF
OST60N65HMF

OST60N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST60N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.7. Size:731K  oriental semi
ost60n65hsxf.pdf

OST60N65HMF
OST60N65HMF

OST60N65HSXF Enhancement Mode N-Channel Power IGBT General Description OST60N65HSXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

Datasheet: OST50N65HM2F , OST50N65HMF , OST50N65HSNF , OST50N65HSZF , OST50N65HXF , OST50N65HZF , OST60N65H4EMF , OST60N65HEMF , IXRH40N120 , OST60N65HSMF , OST60N65HSXF , OST60N65HSZF , OST60N65HXF , OST75N120HM2F , OST75N65HEM2F , OST75N65HEMF , OST75N65HLMF .

 

 
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