OST75N65HLMF Todos los transistores

 

OST75N65HLMF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OST75N65HLMF
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 536 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 105 nS
   Coesⓘ - Capacitancia de salida, typ: 303 pF
   Qgⓘ - Carga total de la puerta, typ: 466 nC
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de OST75N65HLMF IGBT

   - Selección ⓘ de transistores por parámetros

 

OST75N65HLMF Datasheet (PDF)

 ..1. Size:777K  oriental semi
 ost75n65hlmf.pdf pdf_icon

OST75N65HLMF

OST75N65HLMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HLMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.1. Size:741K  oriental semi
 ost75n65hnf.pdf pdf_icon

OST75N65HLMF

OST75N65HNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.2. Size:777K  oriental semi
 ost75n65hswf.pdf pdf_icon

OST75N65HLMF

 5.3. Size:741K  oriental semi
 ost75n65htnf.pdf pdf_icon

OST75N65HLMF

OST75N65HTNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HTNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

MOSTRAR MÁS

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: BRGB6N65DP | IXSH30N60A | AOK60B60D1 | MIXA150R1200VA | XNF6N60T | TGAN40N65F2DR | IQGB400N60I4

 

 
Back to Top

 


 
.