OST75N65HSXF Todos los transistores

 

OST75N65HSXF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OST75N65HSXF
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 395 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 90 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 94 nS
   Coesⓘ - Capacitancia de salida, typ: 178 pF
   Qgⓘ - Carga total de la puerta, typ: 206 nC
   Paquete / Cubierta: TO247

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OST75N65HSXF Datasheet (PDF)

 ..1. Size:768K  oriental semi
ost75n65hsxf.pdf

OST75N65HSXF
OST75N65HSXF

OST75N65HSXF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.1. Size:777K  oriental semi
ost75n65hswf.pdf

OST75N65HSXF
OST75N65HSXF

 4.2. Size:747K  oriental semi
ost75n65hsvf.pdf

OST75N65HSXF
OST75N65HSXF

OST75N65HSVF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSVF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.3. Size:751K  oriental semi
ost75n65hszf.pdf

OST75N65HSXF
OST75N65HSXF

OST75N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.4. Size:801K  oriental semi
ost75n65hsnf.pdf

OST75N65HSXF
OST75N65HSXF

OST75N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.5. Size:772K  oriental semi
ost75n65hsmf.pdf

OST75N65HSXF
OST75N65HSXF

OST75N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

Otros transistores... OST75N65HEMF , OST75N65HLMF , OST75N65HM2F , OST75N65HMF , OST75N65HNF , OST75N65HSMF , OST75N65HSNF , OST75N65HSVF , FGH40N60UFD , OST75N65HSZF , OST75N65HTNF , OST75N65HZF , OST80N65H4EMF , OST80N65HEMF , OST80N65HEVF , OST80N65HSMF , OST90N60HCZF .

 

 
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