Справочник IGBT. OST75N65HSXF

 

OST75N65HSXF - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: OST75N65HSXF
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 395 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 90 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.45 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 94 nS
   Coesⓘ - Выходная емкость, типовая: 178 pF
   Qgⓘ - Общий заряд затвора, typ: 206 nC
   Тип корпуса: TO247

 Аналог (замена) для OST75N65HSXF

 

 

OST75N65HSXF Datasheet (PDF)

 ..1. Size:768K  oriental semi
 ost75n65hsxf.pdf

OST75N65HSXF OST75N65HSXF

OST75N65HSXF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.1. Size:777K  oriental semi
 ost75n65hswf.pdf

OST75N65HSXF OST75N65HSXF

 4.2. Size:747K  oriental semi
 ost75n65hsvf.pdf

OST75N65HSXF OST75N65HSXF

OST75N65HSVF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSVF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.3. Size:751K  oriental semi
 ost75n65hszf.pdf

OST75N65HSXF OST75N65HSXF

OST75N65HSZF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.4. Size:801K  oriental semi
 ost75n65hsnf.pdf

OST75N65HSXF OST75N65HSXF

OST75N65HSNF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSNF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.5. Size:772K  oriental semi
 ost75n65hsmf.pdf

OST75N65HSXF OST75N65HSXF

OST75N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST75N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

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