IXGK50N50BU1 Todos los transistores

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IXGK50N50BU1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGK50N50BU1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 500V

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 75A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 150

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: ISOTOP

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IXGK50N50BU1 Datasheet (PDF)

3.1. ixgh50n90b2d1 ixgk50n90b2d1 ixgx50n90b2d1.pdf Size:203K _ixys

IXGK50N50BU1
IXGK50N50BU1

IXGH 50N90B2D1 VCES = 900 V HiPerFASTTM IXGK 50N90B2D1 IC25 = 75 A IGBT with Fast IXGX 50N90B2D1 VCE(sat) = 2.7 V Diode tfi typ = 200 ns B2-Class High Speed IGBT with Fast Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25C to 150C 900 V VCGR TJ = 25C to 150C; RGE = 1 M? 900 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V

3.2. ixgk50n60b2d1 ixgx50n60b2d1.pdf Size:627K _ixys

IXGK50N50BU1
IXGK50N50BU1

Advance Technical Data IXGK50N60B2D1 VCES = 600 V HiPerFASTTM IXGX 50N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 65 ns Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25C (limited by

3.3. ixgk50n60c2d1 ixgx50n60c2d1.pdf Size:628K _ixys

IXGK50N50BU1
IXGK50N50BU1

IXGK50N60C2D1 VCES = 600 V HiPerFASTTM IXGX 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.5 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V (TAB) G C E VGES Continuous 20 V VGEM Transient 30 V PLUS247 IC25 TC = 25C (limited

3.4. ixgk50n60a2u1 ixgx50n60a2u1.pdf Size:143K _ixys

IXGK50N50BU1
IXGK50N50BU1

Advance Technical Information IXGK 50N60A2U1 VCES = 600 V IGBT with Diode IXGX 50N60A2U1 IC25 = 75 A VCE(sat) = 1.6 V Low Saturation Voltage IGBT with Low Forward Drop Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V (TAB) G C E VGES Continuous 20 V VGEM Transient 30 V PLU

3.5. ixgk50n60b.pdf Size:181K _igbt

IXGK50N50BU1
IXGK50N50BU1

IXGH 50N60B HiPerFASTTM IGBT VCES = 600 V IXGK 50N60B IC25 = 75 A IXGT 50N60B VCE(sat) = 2.3 V IXGJ 50N60B tfi(typ) = 120 ns TO-247 AD (IXGH) C C (TAB) Symbol Test Conditions Maximum Ratings E VCES TJ = 25°C to 150°C 600 V TO-268 (D3) ( IXGT) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C (TAB) E IC25 TC = 25°C75 A TO-268 Le

3.6. ixgk50n120c3h1.pdf Size:217K _igbt

IXGK50N50BU1
IXGK50N50BU1

Preliminary Technical Information VCES = 1200V GenX3TM 1200V IXGK50N120C3H1 IC100 = 50A IGBTs w/ Diode IXGX50N120C3H1 ≤ VCE(sat) ≤ ≤ 4.2V ≤ ≤ tfi(typ) = 64ns High-Speed PT IGBTs for 20 - 50 kHz Switching TO-264 (IXGK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25°C to 150°C 1200 V Tab VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1200 V PLUS247 (IXGX) V

3.7. ixgk50n60b2d1.pdf Size:494K _igbt

IXGK50N50BU1
IXGK50N50BU1

Advance Technical Data IXGK50N60B2D1 VCES = 600 V HiPerFASTTM IXGX 50N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 65 ns Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) G C VGES Continuous ±20 V E VGEM Transient ±30 V PLUS247 IC25 TC = 25°C

3.8. ixgk50n90b2d1.pdf Size:198K _igbt

IXGK50N50BU1
IXGK50N50BU1

IXGH 50N90B2D1 VCES = 900 V HiPerFASTTM IXGK 50N90B2D1 IC25 = 75 A IGBT with Fast IXGX 50N90B2D1 VCE(sat) = 2.7 V Diode tfi typ = 200 ns B2-Class High Speed IGBT with Fast Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25°C to 150°C 900 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 900 V C (TAB) VGES Continuous ± 20 V G C VGEM Transien

3.9. ixgk50n60a2d1.pdf Size:121K _igbt

IXGK50N50BU1
IXGK50N50BU1

Advance Technical Data IXGK50N60A2D1 VCES = 600 V IGBT with Diode IXGX 50N60A2D1 IC25 = 75 A VCE(sat) = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) G C VGES Continuous ±20 V E VGEM Transient ±30 V PLUS247 IC25 TC = 25°C (limited by leads) 75 A (IXGX) I

3.10. ixgk50n60bd1.pdf Size:88K _igbt

IXGK50N50BU1
IXGK50N50BU1

IXGK 50N60BD1 VCES = 600 V HiPerFASTTM IXGX 50N60BD1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.3 V tfi = 85 ns Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C75 A PLUS247 IC90 TC = 90°C50 A (IXGX) ICM TC = 25°C, 1 m

3.11. ixgk50n60c2d1.pdf Size:493K _igbt

IXGK50N50BU1
IXGK50N50BU1

IXGK50N60C2D1 VCES = 600 V HiPerFASTTM IXGX 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.5 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) G C E VGES Continuous ±20 V VGEM Transient ±30 V PLUS247 IC25 TC = 25

Otros transistores... IXGH40N30A , IXGH40N30B , IXGH40N30BD1 , IXGH41N60 , IXGH50N60A , IXGH50N60B , IXGH60N60 , IXGK120N60B , IKW40N120H3 , IXGK50N60AU1 , IXGK50N60B , IXGK50N60BD1 , IXGK50N60BU1 , IXGK60N60 , IXGK80N60A , IXGK80N60AU1 , IXGM17N100 .

 


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Introduzca al menos 1 números o letras