All IGBT. IXGK50N50BU1 Datasheet

 

IXGK50N50BU1 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXGK50N50BU1
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3(max) V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 50 nS
   Package: TO264

 IXGK50N50BU1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXGK50N50BU1 Datasheet (PDF)

 ..1. Size:167K  ixys
ixgk50n50bu1 ixgk50n60bu1.pdf

IXGK50N50BU1
IXGK50N50BU1

VCES IC25 VCE(sat) tfiHiPerFASTTMIXGK 50N50BU1500 V 75 A 2.3 V 100nsIGBT with Diode600 V 75 A 2.5 V 120nsIXGK 50N60BU1Combi PackPreliminary dataSymbol Test Conditions Maximum Ratings TO-264 AA50N50 50N60VCES TJ = 25 C to 150 C 500 600 VVCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 VGVGES Continuous 20 20 VCEVGEM Transient 30 30 VIC25 TC = 25 C75 75 AG = Ga

 7.1. Size:217K  ixys
ixgk50n120c3h1.pdf

IXGK50N50BU1
IXGK50N50BU1

Preliminary Technical InformationVCES = 1200VGenX3TM 1200V IXGK50N120C3H1IC100 = 50AIGBTs w/ Diode IXGX50N120C3H1VCE(sat) 4.2Vtfi(typ) = 64nsHigh-Speed PT IGBTsfor 20 - 50 kHz SwitchingTO-264 (IXGK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 150C 1200 VTabVCGR TJ = 25C to 150C, RGE = 1M 1200 VPLUS247 (IXGX)V

 7.2. Size:198K  ixys
ixgk50n90b2d1.pdf

IXGK50N50BU1
IXGK50N50BU1

IXGH 50N90B2D1 VCES = 900 VHiPerFASTTMIXGK 50N90B2D1 IC25 = 75 AIGBT with FastIXGX 50N90B2D1 VCE(sat) = 2.7 VDiodetfi typ = 200 nsB2-Class High Speed IGBTwith Fast DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transien

 7.3. Size:628K  ixys
ixgk50n60c2d1 ixgx50n60c2d1.pdf

IXGK50N50BU1
IXGK50N50BU1

IXGK50N60C2D1 VCES = 600 VHiPerFASTTMIXGX 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient 30 VPLUS247IC25 TC = 25

 7.4. Size:493K  ixys
ixgk50n60c2d1.pdf

IXGK50N50BU1
IXGK50N50BU1

IXGK50N60C2D1 VCES = 600 VHiPerFASTTMIXGX 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient 30 VPLUS247IC25 TC = 25

 7.5. Size:494K  ixys
ixgk50n60b2d1.pdf

IXGK50N50BU1
IXGK50N50BU1

Advance Technical DataIXGK50N60B2D1 VCES = 600 VHiPerFASTTMIXGX 50N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 65 nsSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C

 7.6. Size:203K  ixys
ixgh50n90b2d1 ixgk50n90b2d1 ixgx50n90b2d1.pdf

IXGK50N50BU1
IXGK50N50BU1

IXGH 50N90B2D1 VCES = 900 VHiPerFASTTMIXGK 50N90B2D1 IC25 = 75 AIGBT with FastIXGX 50N90B2D1 VCE(sat) = 2.7 VDiodetfi typ = 200 nsB2-Class High Speed IGBTwith Fast DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-247 (IXGH)VCES TJ = 25C to 150C 900 VVCGR TJ = 25C to 150C; RGE = 1 M 900 VC (TAB)VGES Continuous 20 VGCVGEM Transien

 7.7. Size:627K  ixys
ixgk50n60b2d1 ixgx50n60b2d1.pdf

IXGK50N50BU1
IXGK50N50BU1

Advance Technical DataIXGK50N60B2D1 VCES = 600 VHiPerFASTTMIXGX 50N60B2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.0 VB2-Class High Speed IGBTstfi(typ) = 65 nsSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C

 7.8. Size:181K  ixys
ixgk50n60b ixgt50n60b ixgj50n60b.pdf

IXGK50N50BU1
IXGK50N50BU1

IXGH 50N60BHiPerFASTTM IGBT VCES = 600 VIXGK 50N60BIC25 = 75 AIXGT 50N60BVCE(sat) = 2.3 VIXGJ 50N60Btfi(typ) = 120 nsTO-247 AD (IXGH)C C (TAB)Symbol Test Conditions Maximum Ratings EVCES TJ = 25C to 150C 600 VTO-268 (D3) ( IXGT)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC25 TC = 25C75 ATO-268 Le

 7.9. Size:121K  ixys
ixgk50n60a2d1.pdf

IXGK50N50BU1
IXGK50N50BU1

Advance Technical DataIXGK50N60A2D1 VCES = 600 VIGBT with DiodeIXGX 50N60A2D1IC25 = 75 AVCE(sat) = 1.4 VLow Saturation VoltageSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C (limited by leads) 75 A (IXGX)I

 7.10. Size:143K  ixys
ixgk50n60a2u1 ixgx50n60a2u1.pdf

IXGK50N50BU1
IXGK50N50BU1

Advance Technical InformationIXGK 50N60A2U1 VCES = 600 VIGBT with DiodeIXGX 50N60A2U1IC25 = 75 AVCE(sat) = 1.6 VLow Saturation Voltage IGBTwith Low Forward Drop DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient

 7.11. Size:149K  ixys
ixgk50n60au1.pdf

IXGK50N50BU1
IXGK50N50BU1

HiPerFASTTM IXGK 50N60AU1 VCES = 600 VIGBT with Diode IC25 = 75 AVCE(sat) = 2.7 VCombi Pack tfi = 275 nsSymbol Test Conditions Maximum Ratings TO-264 AAVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C, limited by leads 75 AG = Gate, C = Collector,IC90 TC = 90C50 AE = Emitter,

 7.12. Size:88K  ixys
ixgk50n60bd1.pdf

IXGK50N50BU1
IXGK50N50BU1

IXGK 50N60BD1VCES = 600 VHiPerFASTTMIXGX 50N60BD1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.3 Vtfi = 85 nsSymbol Test Conditions Maximum RatingsTO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 V (TAB)VGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C75 APLUS247IC90 TC = 90C50 A(IXGX)ICM TC = 25C, 1 m

 7.13. Size:181K  ixys
ixgk50n60b.pdf

IXGK50N50BU1
IXGK50N50BU1

IXGH 50N60BHiPerFASTTM IGBT VCES = 600 VIXGK 50N60BIC25 = 75 AIXGT 50N60BVCE(sat) = 2.3 VIXGJ 50N60Btfi(typ) = 120 nsTO-247 AD (IXGH)C C (TAB)Symbol Test Conditions Maximum Ratings EVCES TJ = 25C to 150C 600 VTO-268 (D3) ( IXGT)VCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGVGEM Transient 30 VC (TAB)EIC25 TC = 25C75 ATO-268 Le

Datasheet: IXGH40N30A , IXGH40N30B , IXGH40N30BD1 , IXGH41N60 , IXGH50N60A , IXGH50N60B , IXGH60N60 , IXGK120N60B , FGL60N100BNTD , IXGK50N60AU1 , IXGK50N60B , IXGK50N60BD1 , IXGK50N60BU1 , IXGK60N60 , IXGK80N60A , IXGK80N60AU1 , IXGM17N100 .

 

 
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