IXGK50N50BU1 PDF and Equivalents Search

 

IXGK50N50BU1 Specs and Replacement

Type Designator: IXGK50N50BU1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3(max) V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Package: TO264

 IXGK50N50BU1 Substitution

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IXGK50N50BU1 datasheet

 ..1. Size:167K  ixys
ixgk50n50bu1 ixgk50n60bu1.pdf pdf_icon

IXGK50N50BU1

VCES IC25 VCE(sat) tfi HiPerFASTTM IXGK 50N50BU1 500 V 75 A 2.3 V 100ns IGBT with Diode 600 V 75 A 2.5 V 120ns IXGK 50N60BU1 Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings TO-264 AA 50N50 50N60 VCES TJ = 25 C to 150 C 500 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 V G VGES Continuous 20 20 V C E VGEM Transient 30 30 V IC25 TC = 25 C75 75 A G = Ga... See More ⇒

 7.1. Size:217K  ixys
ixgk50n120c3h1.pdf pdf_icon

IXGK50N50BU1

Preliminary Technical Information VCES = 1200V GenX3TM 1200V IXGK50N120C3H1 IC100 = 50A IGBTs w/ Diode IXGX50N120C3H1 VCE(sat) 4.2V tfi(typ) = 64ns High-Speed PT IGBTs for 20 - 50 kHz Switching TO-264 (IXGK) G Symbol Test Conditions Maximum Ratings C E VCES TJ = 25 C to 150 C 1200 V Tab VCGR TJ = 25 C to 150 C, RGE = 1M 1200 V PLUS247 (IXGX) V... See More ⇒

 7.2. Size:198K  ixys
ixgk50n90b2d1.pdf pdf_icon

IXGK50N50BU1

IXGH 50N90B2D1 VCES = 900 V HiPerFASTTM IXGK 50N90B2D1 IC25 = 75 A IGBT with Fast IXGX 50N90B2D1 VCE(sat) = 2.7 V Diode tfi typ = 200 ns B2-Class High Speed IGBT with Fast Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 900 V VCGR TJ = 25 C to 150 C; RGE = 1 M 900 V C (TAB) VGES Continuous 20 V G C VGEM Transien... See More ⇒

 7.3. Size:628K  ixys
ixgk50n60c2d1 ixgx50n60c2d1.pdf pdf_icon

IXGK50N50BU1

IXGK50N60C2D1 VCES = 600 V HiPerFASTTM IXGX 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.5 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C E VGES Continuous 20 V VGEM Transient 30 V PLUS247 IC25 TC = 25... See More ⇒

Specs: IXGH40N30A , IXGH40N30B , IXGH40N30BD1 , IXGH41N60 , IXGH50N60A , IXGH50N60B , IXGH60N60 , IXGK120N60B , NGTB75N65FL2 , IXGK50N60AU1 , IXGK50N60B , IXGK50N60BD1 , IXGK50N60BU1 , IXGK60N60 , IXGK80N60A , IXGK80N60AU1 , IXGM17N100 .

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