OST90N60HCZF Todos los transistores

 

OST90N60HCZF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OST90N60HCZF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 395 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 180 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 126 nS
   Coesⓘ - Capacitancia de salida, typ: 5620 pF
   Paquete / Cubierta: TO247
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OST90N60HCZF Datasheet (PDF)

 ..1. Size:481K  oriental semi
 ost90n60hczf.pdf pdf_icon

OST90N60HCZF

OST90N60HCZF Enhancement Mode N-Channel Power IGBT General Description OST90N60HCZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 7.1. Size:785K  oriental semi
 ost90n65hm2f.pdf pdf_icon

OST90N60HCZF

OST90N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST90N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: GT30G124 | IRG4PSH71KD | TGH30N120FD | GPU150HF120D2 | IRG4PH30K | HGTG30N60C3D | IXBH9N160

 

 
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