OST90N60HCZF Datasheet and Replacement
Type Designator: OST90N60HCZF
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 395 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 180 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 126 nS
Coesⓘ - Output Capacitance, typ: 5620 pF
Package: TO247
- IGBT Cross-Reference
OST90N60HCZF Datasheet (PDF)
ost90n60hczf.pdf

OST90N60HCZF Enhancement Mode N-Channel Power IGBT General Description OST90N60HCZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost90n65hm2f.pdf

OST90N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST90N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
Datasheet: OST75N65HSXF , OST75N65HSZF , OST75N65HTNF , OST75N65HZF , OST80N65H4EMF , OST80N65HEMF , OST80N65HEVF , OST80N65HSMF , SGT40N60NPFDPN , OST90N65HM2F , OSC80N65HF , OSC90N65HF , RJH3047 , GT30F123 , GT30J127 , OST50N65HEWF , OST50N65KEW2F .
History: GPK200HF120D2 | IRG7PSH50UD | GT45F128 | KGT30N120NDA | IRG4PC60UPBF | TGH30N120FD | SGP15N60
Keywords - OST90N60HCZF transistor datasheet
OST90N60HCZF cross reference
OST90N60HCZF equivalent finder
OST90N60HCZF lookup
OST90N60HCZF substitution
OST90N60HCZF replacement
History: GPK200HF120D2 | IRG7PSH50UD | GT45F128 | KGT30N120NDA | IRG4PC60UPBF | TGH30N120FD | SGP15N60



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