All IGBT. OST90N60HCZF Datasheet

 

OST90N60HCZF Datasheet and Replacement


   Type Designator: OST90N60HCZF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 395 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 180 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 126 nS
   Coesⓘ - Output Capacitance, typ: 5620 pF
   Qg ⓘ - Total Gate Charge, typ: 198 nC
   Package: TO247
 

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OST90N60HCZF Datasheet (PDF)

 ..1. Size:481K  oriental semi
 ost90n60hczf.pdf pdf_icon

OST90N60HCZF

OST90N60HCZF Enhancement Mode N-Channel Power IGBT General Description OST90N60HCZF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 7.1. Size:785K  oriental semi
 ost90n65hm2f.pdf pdf_icon

OST90N60HCZF

OST90N65HM2F Enhancement Mode N-Channel Power IGBT General Description OST90N65HM2F uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

Datasheet: OST75N65HSXF , OST75N65HSZF , OST75N65HTNF , OST75N65HZF , OST80N65H4EMF , OST80N65HEMF , OST80N65HEVF , OST80N65HSMF , IXGH60N60 , OST90N65HM2F , OSC80N65HF , OSC90N65HF , RJH3047 , GT30F123 , GT30J127 , OST50N65HEWF , OST50N65KEW2F .

Keywords - OST90N60HCZF transistor datasheet

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