IXGK50N60AU1 Todos los transistores

 

IXGK50N60AU1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGK50N60AU1
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7(max) V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 210 nS
   Qgⓘ - Carga total de la puerta, typ: 200 nC
   Paquete / Cubierta: TO264
     - Selección de transistores por parámetros

 

IXGK50N60AU1 Datasheet (PDF)

 ..1. Size:149K  ixys
ixgk50n60au1.pdf pdf_icon

IXGK50N60AU1

HiPerFASTTM IXGK 50N60AU1 VCES = 600 VIGBT with Diode IC25 = 75 AVCE(sat) = 2.7 VCombi Pack tfi = 275 nsSymbol Test Conditions Maximum Ratings TO-264 AAVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VGCVGEM Transient 30 VEIC25 TC = 25C, limited by leads 75 AG = Gate, C = Collector,IC90 TC = 90C50 AE = Emitter,

 4.1. Size:121K  ixys
ixgk50n60a2d1.pdf pdf_icon

IXGK50N60AU1

Advance Technical DataIXGK50N60A2D1 VCES = 600 VIGBT with DiodeIXGX 50N60A2D1IC25 = 75 AVCE(sat) = 1.4 VLow Saturation VoltageSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCVGES Continuous 20 VEVGEM Transient 30 VPLUS247IC25 TC = 25C (limited by leads) 75 A (IXGX)I

 4.2. Size:143K  ixys
ixgk50n60a2u1 ixgx50n60a2u1.pdf pdf_icon

IXGK50N60AU1

Advance Technical InformationIXGK 50N60A2U1 VCES = 600 VIGBT with DiodeIXGX 50N60A2U1IC25 = 75 AVCE(sat) = 1.6 VLow Saturation Voltage IGBTwith Low Forward Drop DiodePreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient

 5.1. Size:628K  ixys
ixgk50n60c2d1 ixgx50n60c2d1.pdf pdf_icon

IXGK50N60AU1

IXGK50N60C2D1 VCES = 600 VHiPerFASTTMIXGX 50N60C2D1IC25 = 75 AIGBT with DiodeVCE(sat) = 2.5 VC2-Class High Speed IGBTstfi(typ) = 48 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-264 AA(IXGK)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 V (TAB)GCEVGES Continuous 20 VVGEM Transient 30 VPLUS247IC25 TC = 25

Otros transistores... IXGH40N30B , IXGH40N30BD1 , IXGH41N60 , IXGH50N60A , IXGH50N60B , IXGH60N60 , IXGK120N60B , IXGK50N50BU1 , GT30J122 , IXGK50N60B , IXGK50N60BD1 , IXGK50N60BU1 , IXGK60N60 , IXGK80N60A , IXGK80N60AU1 , IXGM17N100 , IXGM17N100A .

History: APT100GT120JU2 | AOD5B65M1 | APT44GA60S

 

 
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History: APT100GT120JU2 | AOD5B65M1 | APT44GA60S

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