IXGK50N60AU1 Todos los transistores

 

IXGK50N60AU1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGK50N60AU1

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 300 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7(max) V @25℃

trⓘ - Tiempo de subida, typ: 210 nS

Encapsulados: TO264

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IXGK50N60AU1 datasheet

 ..1. Size:149K  ixys
ixgk50n60au1.pdf pdf_icon

IXGK50N60AU1

HiPerFASTTM IXGK 50N60AU1 VCES = 600 V IGBT with Diode IC25 = 75 A VCE(sat) = 2.7 V Combi Pack tfi = 275 ns Symbol Test Conditions Maximum Ratings TO-264 AA VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C, limited by leads 75 A G = Gate, C = Collector, IC90 TC = 90 C50 A E = Emitter,

 4.1. Size:121K  ixys
ixgk50n60a2d1.pdf pdf_icon

IXGK50N60AU1

Advance Technical Data IXGK50N60A2D1 VCES = 600 V IGBT with Diode IXGX 50N60A2D1 IC25 = 75 A VCE(sat) = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C (limited by leads) 75 A (IXGX) I

 4.2. Size:143K  ixys
ixgk50n60a2u1 ixgx50n60a2u1.pdf pdf_icon

IXGK50N60AU1

Advance Technical Information IXGK 50N60A2U1 VCES = 600 V IGBT with Diode IXGX 50N60A2U1 IC25 = 75 A VCE(sat) = 1.6 V Low Saturation Voltage IGBT with Low Forward Drop Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C E VGES Continuous 20 V VGEM Transient

 5.1. Size:628K  ixys
ixgk50n60c2d1 ixgx50n60c2d1.pdf pdf_icon

IXGK50N60AU1

IXGK50N60C2D1 VCES = 600 V HiPerFASTTM IXGX 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.5 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C E VGES Continuous 20 V VGEM Transient 30 V PLUS247 IC25 TC = 25

Otros transistores... IXGH40N30B , IXGH40N30BD1 , IXGH41N60 , IXGH50N60A , IXGH50N60B , IXGH60N60 , IXGK120N60B , IXGK50N50BU1 , FGH30S130P , IXGK50N60B , IXGK50N60BD1 , IXGK50N60BU1 , IXGK60N60 , IXGK80N60A , IXGK80N60AU1 , IXGM17N100 , IXGM17N100A .

 

 

 


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