OST60N65H4EWF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OST60N65H4EWF  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 375 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃

trⓘ - Tiempo de subida, typ: 70 nS

Coesⓘ - Capacitancia de salida, typ: 312 pF

Encapsulados: TO247-4L

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OST60N65H4EWF datasheet

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 ost60n65h4ewf.pdf pdf_icon

OST60N65H4EWF

 3.1. Size:817K  oriental semi
 ost60n65h4emf.pdf pdf_icon

OST60N65H4EWF

 5.1. Size:733K  oriental semi
 ost60n65hxf.pdf pdf_icon

OST60N65H4EWF

OST60N65HXF Enhancement Mode N-Channel Power IGBT General Description OST60N65HXF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

 5.2. Size:606K  oriental semi
 ost60n65hsmf.pdf pdf_icon

OST60N65H4EWF

OST60N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST60N65HSMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

MOSTRAR MÁS

Otros transistores... OSC80N65HF, OSC90N65HF, RJH3047, GT30F123, GT30J127, OST50N65HEWF, OST50N65KEW2F, OST60N65H4EMF, SGT40N60NPFDPN, OST75N65HSWF, OST80N65H4EWF, OST80N65HEWF, SGT10T60SD1S, SGT10T60SD1F, SGT10T60SDM1D, SGT10T60SDM1P7, SGT15T60SD1T