OST60N65H4EWF Datasheet and Replacement
Type Designator: OST60N65H4EWF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 375 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 70 nS
Coesⓘ - Output Capacitance, typ: 312 pF
Qg ⓘ - Total Gate Charge, typ: 124 nC
Package: TO247-4L
OST60N65H4EWF substitution
OST60N65H4EWF Datasheet (PDF)
ost60n65hxf.pdf
OST60N65HXF Enhancement Mode N-Channel Power IGBT General Description OST60N65HXF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost60n65hsmf.pdf
OST60N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST60N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
Datasheet: OSC80N65HF , OSC90N65HF , RJH3047 , GT30F123 , GT30J127 , OST50N65HEWF , OST50N65KEW2F , OST60N65H4EMF , GT30F126 , OST75N65HSWF , OST80N65H4EWF , OST80N65HEWF , SGT10T60SD1S , SGT10T60SD1F , SGT10T60SDM1D , SGT10T60SDM1P7 , SGT15T60SD1T .
History: 2MBI300U4N-170-50
Keywords - OST60N65H4EWF transistor datasheet
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History: 2MBI300U4N-170-50
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