OST80N65HEWF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: OST80N65HEWF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 395
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 114
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.5
Tensión máxima de puerta-umbral |VGE(th)|, V: 5.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 163
Capacitancia de salida (Cc), typ, pF: 353
Carga total de la puerta (Qg), typ, nC: 168
Paquete / Cubierta: TO247
Búsqueda de reemplazo de OST80N65HEWF - IGBT
OST80N65HEWF Datasheet (PDF)
ost80n65hevf.pdf
OST80N65HEVF Enhancement Mode N-Channel Power IGBT General Description OST80N65HEVF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost80n65hemf.pdf
OST80N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST80N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
ost80n65h4emf.pdf
OST80N65H4EMF Enhancement Mode N-Channel Power IGBT General Description OST80N65H4EMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn
ost80n65hmf.pdf
OST80N65HMF Enhancement Mode N-Channel Power IGBT General Description OST80N65HMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching performance. CEThis device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost80n65hsmf.pdf
OST80N65HSMF Enhancement Mode N-Channel Power IGBT General Description OST80N65HSMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol
Otros transistores... GT30F123 , GT30J127 , OST50N65HEWF , OST50N65KEW2F , OST60N65H4EMF , OST60N65H4EWF , OST75N65HSWF , OST80N65H4EWF , CRG60T60AN3H , SGT10T60SD1S , SGT10T60SD1F , SGT10T60SDM1D , SGT10T60SDM1P7 , SGT15T60SD1T , SGT15T60SD1F , SGT15T60SD1STR , SGT15U65SD1F .
Liste
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