All IGBT. OST80N65HEWF Datasheet

 

OST80N65HEWF Datasheet and Replacement


   Type Designator: OST80N65HEWF
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 395 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 114 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 163 nS
   Coesⓘ - Output Capacitance, typ: 353 pF
   Package: TO247
 

 OST80N65HEWF substitution

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OST80N65HEWF Datasheet (PDF)

 ..1. Size:900K  oriental semi
ost80n65hewf.pdf pdf_icon

OST80N65HEWF

 4.1. Size:831K  oriental semi
ost80n65hevf.pdf pdf_icon

OST80N65HEWF

OST80N65HEVF Enhancement Mode N-Channel Power IGBT General Description OST80N65HEVF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 4.2. Size:767K  oriental semi
ost80n65hemf.pdf pdf_icon

OST80N65HEWF

OST80N65HEMF Enhancement Mode N-Channel Power IGBT General Description OST80N65HEMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technol

 5.1. Size:804K  oriental semi
ost80n65h4emf.pdf pdf_icon

OST80N65HEWF

OST80N65H4EMF Enhancement Mode N-Channel Power IGBT General Description OST80N65H4EMF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM techn

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: BLG50T65FLA-F | VS-70MT060WHTAPBF | 1MBI300HH-120L-50 | SGT10T60SD1F | JT600N065F2MH1E | 1MBI400NP-120 | SG50N06D3S

Keywords - OST80N65HEWF transistor datasheet

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