SGT20T60SD1F - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGT20T60SD1F
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 46 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 55 nS
Coesⓘ - Capacitancia de salida, typ: 55 pF
Paquete / Cubierta: TO220F
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SGT20T60SD1F Datasheet (PDF)
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SGT20T60SD1F(S)(P7)(FD)(PN) 20A600V C 21SGT20T60SD1F(S)(P7)(FD)(PN)(T)GField Stop III1 UPSSMPS PFC 323TO-3PE 13
sgt20t60sdm1p7.pdf
SGT20T60SDM1P7 20600V C2SGT20T60SDM1P7 Field Stop1G UPSSMPS PFC 3E 20A600VVCE(sat)( )=1.7V@IC=20A
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SGT20T135QR1P7(PN)(PT) 20A1350V C 2SGT20T135QR1P7/PN/PT 1Reverse ConductingG
Otros transistores... SGT15T60SD1T , SGT15T60SD1F , SGT15T60SD1STR , SGT15U65SD1F , SGT15U65SD1FD , SGT20T135QR1P7 , SGT20T135QR1PN , SGT20T135QR1PT , GT30F126 , SGT20T60SD1S , SGT20T60SD1P7 , SGT20T60SD1FD , SGT20T60SD1PN , SGT20T60SD1T , SGT30T60SDM1P7 , SGT30T60SD3PU , SGT40N60F2P7 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2