All IGBT. SGT20T60SD1F Datasheet

 

SGT20T60SD1F IGBT. Datasheet pdf. Equivalent


   Type Designator: SGT20T60SD1F
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 20T60SD
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 46 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 55 nS
   Coesⓘ - Output Capacitance, typ: 55 pF
   Qgⓘ - Total Gate Charge, typ: 52 nC
   Package: TO220F

 SGT20T60SD1F Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGT20T60SD1F Datasheet (PDF)

 ..1. Size:412K  silan
 sgt20t60sd1f sgt20t60sd1s sgt20t60sd1str sgt20t60sd1p7 sgt20t60sd1fd sgt20t60sd1pn sgt20t60sd1t.pdf

SGT20T60SD1F SGT20T60SD1F

SGT20T60SD1F(S)(P7)(FD)(PN) 20A600V C 21SGT20T60SD1F(S)(P7)(FD)(PN)(T)GField Stop III1 UPSSMPS PFC 323TO-3PE 13

 4.1. Size:519K  silan
 sgt20t60sdm1p7.pdf

SGT20T60SD1F SGT20T60SD1F

SGT20T60SDM1P7 20600V C2SGT20T60SDM1P7 Field Stop1G UPSSMPS PFC 3E 20A600VVCE(sat)( )=1.7V@IC=20A

 8.1. Size:329K  silan
 sgt20t135qr1p7 sgt20t135qr1pn sgt20t135qr1pt.pdf

SGT20T60SD1F SGT20T60SD1F

SGT20T135QR1P7(PN)(PT) 20A1350V C 2SGT20T135QR1P7/PN/PT 1Reverse ConductingG

Datasheet: SGT15T60SD1T , SGT15T60SD1F , SGT15T60SD1STR , SGT15U65SD1F , SGT15U65SD1FD , SGT20T135QR1P7 , SGT20T135QR1PN , SGT20T135QR1PT , GT30F126 , SGT20T60SD1S , SGT20T60SD1P7 , SGT20T60SD1FD , SGT20T60SD1PN , SGT20T60SD1T , SGT30T60SDM1P7 , SGT30T60SD3PU , SGT40N60F2P7 .

 

 
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