SGT20T60SD1F Datasheet and Replacement
Type Designator: SGT20T60SD1F
Type: IGBT + Anti-Parallel Diode
Marking Code: 20T60SD
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 46 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 55 nS
Coesⓘ - Output Capacitance, typ: 55 pF
Qgⓘ - Total Gate Charge, typ: 52 nC
Package: TO220F
SGT20T60SD1F Datasheet (PDF)
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Datasheet: SGT15T60SD1T , SGT15T60SD1F , SGT15T60SD1STR , SGT15U65SD1F , SGT15U65SD1FD , SGT20T135QR1P7 , SGT20T135QR1PN , SGT20T135QR1PT , IHW20N135R5 , SGT20T60SD1S , SGT20T60SD1P7 , SGT20T60SD1FD , SGT20T60SD1PN , SGT20T60SD1T , SGT30T60SDM1P7 , SGT30T60SD3PU , SGT40N60F2P7 .
History: IRGB4056DPBF
Keywords - SGT20T60SD1F transistor datasheet
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History: IRGB4056DPBF
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