IXGK50N60BD1 Todos los transistores

 

IXGK50N60BD1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGK50N60BD1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc):

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat):

Tensión emisor-compuerta (Veg):

Corriente del colector DC máxima (Ic): 75

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 150

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO264

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IXGK50N60BD1 Datasheet (PDF)

1.1. ixgk50n60c2d1 ixgx50n60c2d1.pdf Size:628K _ixys

IXGK50N60BD1
IXGK50N60BD1

IXGK50N60C2D1 VCES = 600 V HiPerFASTTM IXGX 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.5 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) G C E VGES Continuous ±20 V VGEM Transient ±30 V PLUS247 IC25 TC = 25

1.2. ixgk50n60b.pdf Size:181K _ixys

IXGK50N60BD1
IXGK50N60BD1

IXGH 50N60B HiPerFASTTM IGBT VCES = 600 V IXGK 50N60B IC25 = 75 A IXGT 50N60B VCE(sat) = 2.3 V IXGJ 50N60B tfi(typ) = 120 ns TO-247 AD (IXGH) C C (TAB) Symbol Test Conditions Maximum Ratings E VCES TJ = 25°C to 150°C 600 V TO-268 (D3) ( IXGT) VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C (TAB) E IC25 TC = 25°C75 A TO-268 Le

 1.3. ixgk50n60a2d1.pdf Size:121K _ixys

IXGK50N60BD1
IXGK50N60BD1

Advance Technical Data IXGK50N60A2D1 VCES = 600 V IGBT with Diode IXGX 50N60A2D1 IC25 = 75 A VCE(sat) = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) G C VGES Continuous ±20 V E VGEM Transient ±30 V PLUS247 IC25 TC = 25°C (limited by leads) 75 A (IXGX) I

1.4. ixgk50n60bd1.pdf Size:88K _ixys

IXGK50N60BD1
IXGK50N60BD1

IXGK 50N60BD1 VCES = 600 V HiPerFASTTM IXGX 50N60BD1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.3 V tfi = 85 ns Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C75 A PLUS247 IC90 TC = 90°C50 A (IXGX) ICM TC = 25°C, 1 m

 1.5. ixgk50n60b2d1.pdf Size:494K _ixys

IXGK50N60BD1
IXGK50N60BD1

Advance Technical Data IXGK50N60B2D1 VCES = 600 V HiPerFASTTM IXGX 50N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 65 ns Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) G C VGES Continuous ±20 V E VGEM Transient ±30 V PLUS247 IC25 TC = 25°C

1.6. ixgk50n60c2d1.pdf Size:493K _ixys

IXGK50N60BD1
IXGK50N60BD1

IXGK50N60C2D1 VCES = 600 V HiPerFASTTM IXGX 50N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.5 V C2-Class High Speed IGBTs tfi(typ) = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) G C E VGES Continuous ±20 V VGEM Transient ±30 V PLUS247 IC25 TC = 25

1.7. ixgk50n60a2u1 ixgx50n60a2u1.pdf Size:143K _ixys

IXGK50N60BD1
IXGK50N60BD1

Advance Technical Information IXGK 50N60A2U1 VCES = 600 V IGBT with Diode IXGX 50N60A2U1 IC25 = 75 A VCE(sat) = 1.6 V Low Saturation Voltage IGBT with Low Forward Drop Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) G C E VGES Continuous ±20 V VGEM Transient

1.8. ixgk50n60b2d1 ixgx50n60b2d1.pdf Size:627K _ixys

IXGK50N60BD1
IXGK50N60BD1

Advance Technical Data IXGK50N60B2D1 VCES = 600 V HiPerFASTTM IXGX 50N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 65 ns Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) G C VGES Continuous ±20 V E VGEM Transient ±30 V PLUS247 IC25 TC = 25°C

Otros transistores... IXGH41N60 , IXGH50N60A , IXGH50N60B , IXGH60N60 , IXGK120N60B , IXGK50N50BU1 , IXGK50N60AU1 , IXGK50N60B , IRGP50B60PD1 , IXGK50N60BU1 , IXGK60N60 , IXGK80N60A , IXGK80N60AU1 , IXGM17N100 , IXGM17N100A , IXGM25N100 , IXGM25N100A .

 

 
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