IXGK50N60BD1 PDF and Equivalents Search

 

IXGK50N60BD1 Specs and Replacement

Type Designator: IXGK50N60BD1

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 300 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3(max) V @25℃

tr ⓘ - Rise Time, typ: 50 nS

Coesⓘ - Output Capacitance, typ: 340 pF

Package: TO264

 IXGK50N60BD1 Substitution

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IXGK50N60BD1 datasheet

 ..1. Size:88K  ixys
 ixgk50n60bd1.pdf pdf_icon

IXGK50N60BD1

IXGK 50N60BD1 VCES = 600 V HiPerFASTTM IXGX 50N60BD1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.3 V tfi = 85 ns Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E IC25 TC = 25 C75 A PLUS247 IC90 TC = 90 C50 A (IXGX) ICM TC = 25 C, 1 m... See More ⇒

 4.1. Size:494K  ixys
 ixgk50n60b2d1.pdf pdf_icon

IXGK50N60BD1

Advance Technical Data IXGK50N60B2D1 VCES = 600 V HiPerFASTTM IXGX 50N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 65 ns Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C... See More ⇒

 4.2. Size:627K  ixys
 ixgk50n60b2d1 ixgx50n60b2d1.pdf pdf_icon

IXGK50N60BD1

Advance Technical Data IXGK50N60B2D1 VCES = 600 V HiPerFASTTM IXGX 50N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 65 ns Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C... See More ⇒

 4.3. Size:181K  ixys
 ixgk50n60b ixgt50n60b ixgj50n60b.pdf pdf_icon

IXGK50N60BD1

IXGH 50N60B HiPerFASTTM IGBT VCES = 600 V IXGK 50N60B IC25 = 75 A IXGT 50N60B VCE(sat) = 2.3 V IXGJ 50N60B tfi(typ) = 120 ns TO-247 AD (IXGH) C C (TAB) Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V TO-268 (D3) ( IXGT) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC25 TC = 25 C75 A TO-268 Le... See More ⇒

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Specs: IXGH41N60 , IXGH50N60A , IXGH50N60B , IXGH60N60 , IXGK120N60B , IXGK50N50BU1 , IXGK50N60AU1 , IXGK50N60B , RJH60F5DPQ-A0 , IXGK50N60BU1 , IXGK60N60 , IXGK80N60A , IXGK80N60AU1 , IXGM17N100 , IXGM17N100A , IXGM25N100 , IXGM25N100A .

Keywords - IXGK50N60BD1 transistor spec

 IXGK50N60BD1 cross reference
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