SGT40U120FD1P7 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SGT40U120FD1P7
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 312 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 118 nS
Coesⓘ - Capacitancia de salida, typ: 140 pF
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
SGT40U120FD1P7 Datasheet (PDF)
sgt40u120fd1p7.pdf
SGT40U120FD1P7 40A1200V C2SGT40U120FD1P7 1Field Stop 4+GUPSSMPS
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SGT40N60FD1P7 40A, 600V C 2SGT40N60FD1P7 1G UPSSMPS PFC 3E 40A, 600V, VCE(sat) =1.8V@IC=40A
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SGT40N60F2P7 40A, 600V C2SGT40N60F2P7 1Field Stop IIG UPSSMPS PFC 3E 4
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SGT40N60FD2PN(P7)(PT) 40A, 600V C2 SGT40N60FD2PN(P7)(PT) 112G3 Field Stop III TO-247-3L SMPS UPS
Otros transistores... SGT20T60SD1PN , SGT20T60SD1T , SGT30T60SDM1P7 , SGT30T60SD3PU , SGT40N60F2P7 , SGT40N60FD1P7 , SGT40N60FD2PT , SGT40T120SDB4P7 , IKW50N60H3 , SGT50T65SDM1P7 , SGT60N60FD1PS , SGT60N60FD1PT , SGT60U65FD1P7 , SGT70N65FD1P7 , SGT70N65FDM1P7 , SGT75T65SDM1P4 , SGT75T65SDM1P7 .
History: MMG75WD120XB6T4N | MMG400D120UA6TC | DAHF100G120SA
History: MMG75WD120XB6T4N | MMG400D120UA6TC | DAHF100G120SA
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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