SGT40U120FD1P7 IGBT. Datasheet pdf. Equivalent
Type Designator: SGT40U120FD1P7
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 312 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 118 nS
Coesⓘ - Output Capacitance, typ: 140 pF
Package: TO247
SGT40U120FD1P7 Transistor Equivalent Substitute - IGBT Cross-Reference Search
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