IXGK50N60BU1 Todos los transistores

 

IXGK50N60BU1 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGK50N60BU1
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 300 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 50 nS
   Paquete / Cubierta: TO264
 

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Principales características: IXGK50N60BU1

 ..1. Size:167K  ixys
 ixgk50n50bu1 ixgk50n60bu1.pdf pdf_icon

IXGK50N60BU1

VCES IC25 VCE(sat) tfi HiPerFASTTM IXGK 50N50BU1 500 V 75 A 2.3 V 100ns IGBT with Diode 600 V 75 A 2.5 V 120ns IXGK 50N60BU1 Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings TO-264 AA 50N50 50N60 VCES TJ = 25 C to 150 C 500 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 V G VGES Continuous 20 20 V C E VGEM Transient 30 30 V IC25 TC = 25 C75 75 A G = Ga

 4.1. Size:494K  ixys
 ixgk50n60b2d1.pdf pdf_icon

IXGK50N60BU1

Advance Technical Data IXGK50N60B2D1 VCES = 600 V HiPerFASTTM IXGX 50N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 65 ns Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C

 4.2. Size:627K  ixys
 ixgk50n60b2d1 ixgx50n60b2d1.pdf pdf_icon

IXGK50N60BU1

Advance Technical Data IXGK50N60B2D1 VCES = 600 V HiPerFASTTM IXGX 50N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.0 V B2-Class High Speed IGBTs tfi(typ) = 65 ns Symbol Test Conditions Maximum Ratings TO-264 (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C

 4.3. Size:181K  ixys
 ixgk50n60b ixgt50n60b ixgj50n60b.pdf pdf_icon

IXGK50N60BU1

IXGH 50N60B HiPerFASTTM IGBT VCES = 600 V IXGK 50N60B IC25 = 75 A IXGT 50N60B VCE(sat) = 2.3 V IXGJ 50N60B tfi(typ) = 120 ns TO-247 AD (IXGH) C C (TAB) Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V TO-268 (D3) ( IXGT) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) E IC25 TC = 25 C75 A TO-268 Le

MOSTRAR MÁS

Otros transistores... IXGH50N60A , IXGH50N60B , IXGH60N60 , IXGK120N60B , IXGK50N50BU1 , IXGK50N60AU1 , IXGK50N60B , IXGK50N60BD1 , MBQ40T65FDSC , IXGK60N60 , IXGK80N60A , IXGK80N60AU1 , IXGM17N100 , IXGM17N100A , IXGM25N100 , IXGM25N100A , IXGN200N60 .

 

 
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