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IXGK60N60 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXGK60N60

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 300

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.6

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 75

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 50

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO264

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IXGK60N60 Datasheet (PDF)

1.1. ixgh60n60 ixgk60n60 ixgt60n60.pdf Size:95K _ixys

IXGK60N60
IXGK60N60

VCES = 600 V Ultra-Low VCE(sat) IGBT IXGH 60N60 IC25 = 75 A IXGK 60N60 VCE(sat) = 1.7 V IXGT 60N60 Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G C VGES Continuous ±20 V E VGEM Transient ±30 V TO-268 IC25 TC = 25°C, limited by leads 75 A (IXGT) IC90 TC = 90°C60 A G E ICM TC = 25°C,

1.2. ixgk60n60c2d1.pdf Size:188K _ixys

IXGK60N60
IXGK60N60

IXGK 60N60C2D1 VCES = 600 V HiPerFASTTM IXGX 60N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.5 V C2-Class High Speed IGBTs tfi(typ) = 35 ns Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) G C VGES Continuous ±20 V E VGEM Transient ±30 V PLUS247 IC25 TC = 25°C (limited by leads)

 1.3. ixgk60n60b2d1 ixgx60n60b2d1.pdf Size:622K _ixys

IXGK60N60
IXGK60N60

Advance Technical Data IXGK60N60B2D1 VCES = 600 V HiPerFASTTM IXGX 60N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat) < 1.8 V Optimized for 10-25 kHz tfi(typ) = 100 ns hard switching and up to 100 kHz resonant switching Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) G C VGES Continuous ±

1.4. ixgk60n60.pdf Size:94K _ixys

IXGK60N60
IXGK60N60

VCES = 600 V Ultra-Low VCE(sat) IGBT IXGH 60N60 IC25 = 75 A IXGK 60N60 VCE(sat) = 1.7 V IXGT 60N60 Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V G C VGES Continuous ±20 V E VGEM Transient ±30 V TO-268 IC25 TC = 25°C, limited by leads 75 A (IXGT) IC90 TC = 90°C60 A G E ICM TC = 25°C,

 1.5. ixgk60n60b2d1.pdf Size:490K _ixys

IXGK60N60
IXGK60N60

Advance Technical Data IXGK60N60B2D1 VCES = 600 V HiPerFASTTM IXGX 60N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat) < 1.8 V Optimized for 10-25 kHz tfi(typ) = 100 ns hard switching and up to 100 kHz resonant switching Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V (TAB) G C VGES Continuous ±

Otros transistores... IXGH50N60B , IXGH60N60 , IXGK120N60B , IXGK50N50BU1 , IXGK50N60AU1 , IXGK50N60B , IXGK50N60BD1 , IXGK50N60BU1 , IKW40T120 , IXGK80N60A , IXGK80N60AU1 , IXGM17N100 , IXGM17N100A , IXGM25N100 , IXGM25N100A , IXGN200N60 , IXGN200N60A .

 

 
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