IXGK60N60 - аналоги, параметры транзистора - Справочник транзисторов

IXGK60N60 даташит

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VCES = 600 V Ultra-Low VCE(sat) IGBT IXGH 60N60 IC25 = 75 A IXGK 60N60 VCE(sat) = 1.7 V IXGT 60N60 Symbol Test Conditions Maximum Ratings TO-247 AD (IXGH) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 IC25 TC = 25 C, limited by leads 75 A (IXGT) IC90 TC = 90 C60 A G E ICM TC = 25 C,

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ixgk60n60b2d1 ixgx60n60b2d1.pdf pdf_icon

Advance Technical Data IXGK60N60B2D1 VCES = 600 V HiPerFASTTM IXGX 60N60B2D1 IC25 = 75 A IGBT with Diode VCE(sat)

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ixgk60n60c2d1.pdf pdf_icon

IXGK 60N60C2D1 VCES = 600 V HiPerFASTTM IXGX 60N60C2D1 IC25 = 75 A IGBT with Diode VCE(sat) = 2.5 V C2-Class High Speed IGBTs tfi(typ) = 35 ns Symbol Test Conditions Maximum Ratings TO-264 AA (IXGK) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V (TAB) G C VGES Continuous 20 V E VGEM Transient 30 V PLUS247 IC25 TC = 25 C (limited by leads)