SIB30N60G21B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SIB30N60G21B  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 170 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃

trⓘ - Tiempo de subida, typ: 41 nS

Coesⓘ - Capacitancia de salida, typ: 82 pF

Encapsulados: TO263

  📄📄 Copiar 

 Búsqueda de reemplazo de SIB30N60G21B IGBT

- Selecciónⓘ de transistores por parámetros

 

SIB30N60G21B datasheet

 ..1. Size:1095K  cn super semi
 sif30n60g21b sip30n60g21b siw30n60g21b sib30n60g21b.pdf pdf_icon

SIB30N60G21B

SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 600V Trench and Super Junction IGBT SI*30N60G21B Rev. 0.91 Jul. 2023 www.supersemi.com.cn SIF30N60G21B/SIP30N60G21B/SIW30N60G21B/ SIB30N60G21B 600V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 600 V designed according to the super junction (SJ) IC 30 A technology. Th

 7.1. Size:1094K  cn super semi
 sif30n65g21f sip30n65g21f siw30n65g21f sib30n65g21f.pdf pdf_icon

SIB30N60G21B

SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 650V Trench and Super Junction IGBT SI*30N65G21F Rev. 0.91 Jul. 2023 www.supersemi.com.cn SIF30N65G21F/SIP30N65G21F/SIW30N65G21F/ SIB30N65G21F 650V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 650 V designed according to the super junction (SJ) IC 30 A technology. Th

Otros transistores... SL20T65FL1, SL20T65K1, SL20T65F1, SL25T120FL, SL40T65FL1, SIF30N60G21B, SIP30N60G21B, SIW30N60G21B, GT30J124, SIF30N65G21F, SIP30N65G21F, SIW30N65G21F, SIB30N65G21F, GT40T321, KDG20N120H2, SKT030N065, ATT030N065EQ