SIB30N60G21B Datasheet. Specs and Replacement

Type Designator: SIB30N60G21B

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 170 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V

tr ⓘ - Rise Time, typ: 41 nS

Coesⓘ - Output Capacitance, typ: 82 pF

Qg ⓘ - Total Gate Charge, typ: 60 nC

Package: TO263

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SIB30N60G21B datasheet

 ..1. Size:1095K  cn super semi
 sif30n60g21b sip30n60g21b siw30n60g21b sib30n60g21b.pdf pdf_icon

SIB30N60G21B

SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 600V Trench and Super Junction IGBT SI*30N60G21B Rev. 0.91 Jul. 2023 www.supersemi.com.cn SIF30N60G21B/SIP30N60G21B/SIW30N60G21B/ SIB30N60G21B 600V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 600 V designed according to the super junction (SJ) IC 30 A technology. Th... See More ⇒

 7.1. Size:1094K  cn super semi
 sif30n65g21f sip30n65g21f siw30n65g21f sib30n65g21f.pdf pdf_icon

SIB30N60G21B

SUPER-SEMI Super Junction Insulated Gate Bipolar Transistor 650V Trench and Super Junction IGBT SI*30N65G21F Rev. 0.91 Jul. 2023 www.supersemi.com.cn SIF30N65G21F/SIP30N65G21F/SIW30N65G21F/ SIB30N65G21F 650V Trench and Super Junction IGBT General Description Super-Semi Trench and Super Junction IGBTs, VCE 650 V designed according to the super junction (SJ) IC 30 A technology. Th... See More ⇒

Specs: SL20T65FL1, SL20T65K1, SL20T65F1, SL25T120FL, SL40T65FL1, SIF30N60G21B, SIP30N60G21B, SIW30N60G21B, GT30J124, SIF30N65G21F, SIP30N65G21F, SIW30N65G21F, SIB30N65G21F, GT40T321, KDG20N120H2, SKT030N065, ATT030N065EQ

Keywords - SIB30N60G21B transistor spec

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