GT40T321 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GT40T321 📄📄
Tipo de transistor: IGBT + Diode
Código de marcado: 40T321
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 230 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1500 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.25 V @25℃
trⓘ - Tiempo de subida, typ: 150 nS
Encapsulados: 2-16C1C
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GT40T321 datasheet
gt40t321.pdf
GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Unit mm Voltage Resonance Inverter Switching Application Sixth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT tf = 0.24 s (typ.) (IC = 40 A) FRD trr = 0.7 s (typ.) (di/dt = -20 A/ s) Low saturation vo
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Otros transistores... SIF30N60G21B, SIP30N60G21B, SIW30N60G21B, SIB30N60G21B, SIF30N65G21F, SIP30N65G21F, SIW30N65G21F, SIB30N65G21F, IXGH60N60, KDG20N120H2, SKT030N065, ATT030N065EQ, ATT040K065EQ, ATT040N120EQ, ATT050K065FQC, ATT060U060EQ, ATT075N065EQ
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