GT40T321 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GT40T321
Tipo de transistor: IGBT + Diode
Código de marcado: 40T321
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 230 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1500 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.25 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 150 nS
Paquete / Cubierta: 2-16C1C
Búsqueda de reemplazo de GT40T321 - IGBT
GT40T321 Datasheet (PDF)
gt40t321.pdf
GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Unit: mmVoltage Resonance Inverter Switching Application Sixth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT: tf = 0.24 s (typ.) (IC = 40 A) FRD: trr = 0.7 s (typ.) (di/dt = -20 A/ s) Low saturation vo
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SGT40T120SDB4P7 40A1200V C2SGT40T120SDB4P7 1Trench Field Stop IVG UPSSMPS 3E
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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