GT40T321 IGBT. Datasheet pdf. Equivalent
Type Designator: GT40T321
Type: IGBT + Anti-Parallel Diode
Marking Code: 40T321
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 230 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1500 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.25 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 150 nS
Package: 2-16C1C
GT40T321 Transistor Equivalent Substitute - IGBT Cross-Reference Search
GT40T321 Datasheet (PDF)
gt40t321.pdf
GT40T321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T321 Consumer Application Unit: mmVoltage Resonance Inverter Switching Application Sixth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT: tf = 0.24 s (typ.) (IC = 40 A) FRD: trr = 0.7 s (typ.) (di/dt = -20 A/ s) Low saturation vo
gt40t301.pdf
GT40T301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301 Parallel Resonance Inverter Switching Applications Unit: mm FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 s (typ.) (IC = 40 A) FRD : trr = 0.7 s (typ.) (di/dt = -20 A/s) Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40
rgt40ts65d.pdf
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sgt40t120sdb4p7.pdf
SGT40T120SDB4P7 40A1200V C2SGT40T120SDB4P7 1Trench Field Stop IVG UPSSMPS 3E
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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