IXGN200N60 Todos los transistores

 

IXGN200N60 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGN200N60
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 600 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 100 nS
   Coesⓘ - Capacitancia de salida, typ: 600 pF
   Paquete / Cubierta: SOT227B
     - Selección de transistores por parámetros

 

IXGN200N60 Datasheet (PDF)

 ..1. Size:131K  ixys
ixgn200n60 ixgn200n60a.pdf pdf_icon

IXGN200N60

HiPerFASTTM IGBT VCES IC25 VCE(sat)IXGN 200N60 600 V 200 A 2.5 VIXGN 200N60A 600 V 200 A 2.7 VESymbol Test Conditions Maximum Ratings SOT-227B, miniBLOCE VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C 200 ACIC90 TC = 90C 100 AICM TC = 25C, 1 ms 300 AG = Gate, C = Collec

 0.1. Size:553K  ixys
ixgn200n60a2.pdf pdf_icon

IXGN200N60

IXGN 200N60A2 VCES = 600 VIGBTIC25 = 200 AOptimized for SwitchingVCE(sat) = 1.35 Vup to 5 kHzPreliminary Data SheetESymbol Test Conditions Maximum Ratings SOT-227B, miniBLOCE VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C 200 ACIC110 TC = 110C 100 AICM TC = 25C,

 0.2. Size:559K  ixys
ixgn200n60b.pdf pdf_icon

IXGN200N60

IXGN 200N60B VCES = 600 VHiPerFASTTM IGBTIC25 = 200 AVCE(sat) = 2.1 VESymbol Test Conditions Maximum Ratings SOT-227B, miniBLOCE VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C 200 ACIL Terminal Current Limit 100 AIC90 TC = 90C 120 AG = Gate, C = Collector, E = Emitter

 0.3. Size:184K  ixys
ixgn200n60b3.pdf pdf_icon

IXGN200N60

VCES = 600VIXGN200N60B3GenX3TM 600V IGBTIC110 = 200AVCE(sat) 1.50VMedium-Speed Low-Vsat PTIGBT for 5-40kHz SwitchingSOT-227B, miniBLOC E153432E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VE VGEM Transient 30 VCIC25 TC = 25C 300 AIC110 TC

Otros transistores... IXGK50N60BU1 , IXGK60N60 , IXGK80N60A , IXGK80N60AU1 , IXGM17N100 , IXGM17N100A , IXGM25N100 , IXGM25N100A , SGT60U65FD1PT , IXGN200N60A , IXGN200N60B , IXGN50N60B , IXGN50N60BD2 , IXGN50N60BD3 , IXGN60N60 , IXGP12N100 , IXGP12N100A .

History: CRG40T65AN5HD | IRGI4090 | IXYY8N90C3 | SKB15N60HS | STGW12NB60H | MM20G3T135B | STGW25H120F2

 

 
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