IXGN200N60 PDF and Equivalents Search

 

IXGN200N60 Specs and Replacement

Type Designator: IXGN200N60

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 600 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.5(max) V @25℃

tr ⓘ - Rise Time, typ: 100 nS

Coesⓘ - Output Capacitance, typ: 600 pF

Package: SOT227B

 IXGN200N60 Substitution

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IXGN200N60 datasheet

 ..1. Size:131K  ixys
ixgn200n60 ixgn200n60a.pdf pdf_icon

IXGN200N60

HiPerFASTTM IGBT VCES IC25 VCE(sat) IXGN 200N60 600 V 200 A 2.5 V IXGN 200N60A 600 V 200 A 2.7 V E Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C 200 A C IC90 TC = 90 C 100 A ICM TC = 25 C, 1 ms 300 A G = Gate, C = Collec... See More ⇒

 0.1. Size:553K  ixys
ixgn200n60a2.pdf pdf_icon

IXGN200N60

IXGN 200N60A2 VCES = 600 V IGBT IC25 = 200 A Optimized for Switching VCE(sat) = 1.35 V up to 5 kHz Preliminary Data Sheet E Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C 200 A C IC110 TC = 110 C 100 A ICM TC = 25 C,... See More ⇒

 0.2. Size:559K  ixys
ixgn200n60b.pdf pdf_icon

IXGN200N60

IXGN 200N60B VCES = 600 V HiPerFASTTM IGBT IC25 = 200 A VCE(sat) = 2.1 V E Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C 200 A C IL Terminal Current Limit 100 A IC90 TC = 90 C 120 A G = Gate, C = Collector, E = Emitter... See More ⇒

 0.3. Size:184K  ixys
ixgn200n60b3.pdf pdf_icon

IXGN200N60

VCES = 600V IXGN200N60B3 GenX3TM 600V IGBT IC110 = 200A VCE(sat) 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 E Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V E VGEM Transient 30 V C IC25 TC = 25 C 300 A IC110 TC ... See More ⇒

Specs: IXGK50N60BU1 , IXGK60N60 , IXGK80N60A , IXGK80N60AU1 , IXGM17N100 , IXGM17N100A , IXGM25N100 , IXGM25N100A , GT30F125 , IXGN200N60A , IXGN200N60B , IXGN50N60B , IXGN50N60BD2 , IXGN50N60BD3 , IXGN60N60 , IXGP12N100 , IXGP12N100A .

Keywords - IXGN200N60 transistor spec

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