JT050N065WED - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JT050N065WED
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 437 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 100 nS
Coesⓘ - Capacitancia de salida, typ: 283 pF
Paquete / Cubierta: TO-247
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JT050N065WED Datasheet (PDF)
jt050n065wed.pdf
N N-CHANNEL IGBT R JT050N065WED MAIN CHARACTERISTICS Package IC 50 A VCES 650V Vcesat-typ 1.6V Vge=15VAPPLICATIONS General purpose inverters UPS UPS Motor control FEATURES Low gate charge Trench FS
jt050n120gped.pdf
N N-CHANNEL IGBT RJT050N120GPED MAIN CHARACTERISTICS Package TO-247plus IC 50A VCE 1200V Vcesat-typ 2.0V APPLICATIONS TO-247plus General purpose Inverters UPS UPS FEATURES Low gate charge Trench FS Technology Trench FS
jt050n120f2ma1e.pdf
N N-CHANNEL IGBT RIGBT JT050N120F2MA1E MAIN CHARACTERISTICS Package IC 50 A 1200 V V CESVcesat_typ1.80V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Technology FS
jt050k120f2ma1e.pdf
N N-CHANNEL IGBT RIGBT JT050K120F2MA1E MAIN CHARACTERISTICS Package IC 50 A 1200 V V CESVcesat_typ2.0V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2