JT050N065WED Specs and Replacement
Type Designator: JT050N065WED
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 437 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 100 nS
Coesⓘ - Output Capacitance, typ: 283 pF
Package: TO-247
JT050N065WED Substitution - IGBT ⓘ Cross-Reference Search
JT050N065WED datasheet
jt050n065wed.pdf
N N-CHANNEL IGBT R JT050N065WED MAIN CHARACTERISTICS Package IC 50 A VCES 650V Vcesat-typ 1.6V Vge=15V APPLICATIONS General purpose inverters UPS UPS Motor control FEATURES Low gate charge Trench FS... See More ⇒
jt050n120gped.pdf
N N-CHANNEL IGBT R JT050N120GPED MAIN CHARACTERISTICS Package TO-247plus IC 50A VCE 1200V Vcesat-typ 2.0V APPLICATIONS TO-247plus General purpose Inverters UPS UPS FEATURES Low gate charge Trench FS Technology Trench FS ... See More ⇒
jt050n120f2ma1e.pdf
N N-CHANNEL IGBT R IGBT JT050N120F2MA1E MAIN CHARACTERISTICS Package IC 50 A 1200 V V CES Vcesat_typ 1.80V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Technology FS ... See More ⇒
Specs: JT030N065F6MD1E, JT030N065F7PD1E, JT030N065WED, JT030N065FED, JT030N065SED, JT040K065WED, JT040K065AED, JT050K120F2MA1E, YGW60N65F1A1, JT050N120F2MA1E, JT050N120GPED, JT05N065RAD, JT05N065VAD, JT05N065SAD, JT05N065RED, JT05N065SED, JT05N065FED
Keywords - JT050N065WED transistor spec
JT050N065WED cross reference
JT050N065WED equivalent finder
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History: SKM195GB063DN | SKM200GAL173D | MGP20N40CL | AOK20B120E1 | IXXK100N60B3H1 | SKM200GAR123D | JT040K065WED
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