JT075N120GPED - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JT075N120GPED
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 750 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 146 nS
Coesⓘ - Capacitancia de salida, typ: 400 pF
Qgⓘ - Carga total de la puerta, typ: 278 nC
Paquete / Cubierta: TO-247PLUS
- Selección de transistores por parámetros
JT075N120GPED Datasheet (PDF)
jt075n120gped.pdf
N N-CHANNEL IGBT RJT075N120GPED MAIN CHARACTERISTICS Package IC 75A VCE 1200V Vcesat-typ 1.9V APPLICATIONS General purpose Inverters UPS UPS FEATURES Low gate charge Trench FS Technology Trench FS RoHS product Ro
jt075n120f2ma1e.pdf
IGBT IGBT Modules RIGBT JT075N120F2MA1E MAIN CHARACTERISTICS Package IC 75 A 1200 V V CESVcesat_typ1.9V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Techno
jt075n065wed.pdf
N N-CHANNEL IGBT RJT075N065WED MAIN CHARACTERISTICS Package IC 75A VCES 650V Vcesat-typ 1.75V @Vge=15V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS , Trench FS Technology,
jt075n065ghed.pdf
N N-CHANNEL IGBT RJT075N065GHED MAIN CHARACTERISTICS Package IC 75A VCE 650V Vcesat-typ 1.7V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS Trench FS Technology RoHS
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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