IXGN60N60 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGN60N60
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 250 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7(max) V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 290 pF
Paquete / Cubierta: SOT227B
Búsqueda de reemplazo de IXGN60N60 IGBT
Principales características: IXGN60N60
ixgn60n60.pdf
Ultra-Low VCE(sat) IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet E Symbol Test Conditions Maximum Ratings SOT-227B miniBLOC E VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C 100 A C IC90 TC = 90 C60 A G = Gate, C = Collector, E = Emitter ICM TC
ixgn60n60c2.pdf
HiPerFASTTM IGBTs VCES = 600V IXGN60N60C2 with Diode IC110 = 60A IXGN60N60C2D1 VCE(sat) 2.5V trr = 35ns C2-Class High Speed IGBTs E E SOT-227B, miniBLOC E153432 60C2 60C2D1 E Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1 M 600 V E VGES Continuous 20 V C VGEM Transient 30 V IC25 TC
ixgn60n60c2d1.pdf
HiPerFASTTM IGBTs VCES = 600V IXGN60N60C2 with Diode IC110 = 60A IXGN60N60C2D1 VCE(sat) 2.5V trr = 35ns C2-Class High Speed IGBTs E E SOT-227B, miniBLOC E153432 60C2 60C2D1 E Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1 M 600 V E VGES Continuous 20 V C VGEM Transient 30 V IC25 TC
Otros transistores... IXGM25N100 , IXGM25N100A , IXGN200N60 , IXGN200N60A , IXGN200N60B , IXGN50N60B , IXGN50N60BD2 , IXGN50N60BD3 , GT30J122 , IXGP12N100 , IXGP12N100A , IXGP12N100AU1 , IXGP12N100U1 , IXGP12N60C , IXGP12N60CD1 , IXGP15N100C , IXGP15N120B .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sa1106 | 2sb56 | 2sc1451 datasheet | 2sc373 | a1023 datasheet | 2sc1080 | 2sb618 | 2sc1328