IXGN60N60 IGBT. Datasheet pdf. Equivalent
Type Designator: IXGN60N60
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7(max) V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 30 nS
Coesⓘ - Output Capacitance, typ: 290 pF
Qgⓘ - Total Gate Charge, typ: 200 nC
Package: SOT227B
IXGN60N60 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXGN60N60 Datasheet (PDF)
ixgn60n60.pdf
Ultra-Low VCE(sat) IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 VPreliminary data sheetESymbol Test Conditions Maximum RatingsSOT-227B miniBLOCE VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VVGEM Transient 30 VE IC25 TC = 25C 100 ACIC90 TC = 90C60 A G = Gate, C = Collector, E = EmitterICM TC
ixgn60n60c2.pdf
HiPerFASTTM IGBTs VCES = 600VIXGN60N60C2with DiodeIC110 = 60AIXGN60N60C2D1VCE(sat) 2.5Vtrr = 35nsC2-Class High Speed IGBTsEE SOT-227B, miniBLOC E15343260C2 60C2D1E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1 M 600 VE VGES Continuous 20 VCVGEM Transient 30 VIC25 TC
ixgn60n60c2d1.pdf
HiPerFASTTM IGBTs VCES = 600VIXGN60N60C2with DiodeIC110 = 60AIXGN60N60C2D1VCE(sat) 2.5Vtrr = 35nsC2-Class High Speed IGBTsEE SOT-227B, miniBLOC E15343260C2 60C2D1E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1 M 600 VE VGES Continuous 20 VCVGEM Transient 30 VIC25 TC
Datasheet: IXGM25N100 , IXGM25N100A , IXGN200N60 , IXGN200N60A , IXGN200N60B , IXGN50N60B , IXGN50N60BD2 , IXGN50N60BD3 , IHW20N120R2 , IXGP12N100 , IXGP12N100A , IXGP12N100AU1 , IXGP12N100U1 , IXGP12N60C , IXGP12N60CD1 , IXGP15N100C , IXGP15N120B .
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