NCE100ED65VTP IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE100ED65VTP
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 606 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 206 pF
Encapsulados: TO247
Búsqueda de reemplazo de NCE100ED65VTP IGBT
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NCE100ED65VTP datasheet
nce100ed65vtp.pdf
NCE100ED65VTP 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC =
nce100ed65vtp4.pdf
NCE100ED65VTP4 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC
nce100ed65vt4.pdf
NCE100ED65VT4 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC =
nce100ed65vt.pdf
NCE100ED65VT 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC =
Otros transistores... BRG60N60D , BRGB6N65DP , BRGH15N120D , BRGH25N120D , NCE100ED65BT , NCE100ED65BT4 , NCE100ED65VT , NCE100ED65VT4 , FGPF4533 , NCE100ED65VTP4 , NCE100ED75VT , NCE100ED75VT4 , NCE100ED75VTP4 , NCE100TD120BTP , NCE100TD120VTP , NCE100TD120VTP4 , NCE120ED120VTP .
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