Справочник IGBT. NCE100ED65VTP

 

NCE100ED65VTP Даташит. Аналоги. Параметры и характеристики.


   Наименование: NCE100ED65VTP
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 606 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 200 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.45 V @25℃
   Tj ⓘ - Максимальная температура перехода: 175 ℃
   tr ⓘ - Время нарастания типовое: 30 nS
   Coesⓘ - Выходная емкость, типовая: 206 pF
   Тип корпуса: TO247
 

 Аналог (замена) для NCE100ED65VTP

   - подбор ⓘ IGBT транзистора по параметрам

 

NCE100ED65VTP Datasheet (PDF)

 ..1. Size:1179K  ncepower
 nce100ed65vtp.pdf pdf_icon

NCE100ED65VTP

NCE100ED65VTP650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC =

 0.1. Size:1092K  ncepower
 nce100ed65vtp4.pdf pdf_icon

NCE100ED65VTP

NCE100ED65VTP4650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC

 2.1. Size:1119K  ncepower
 nce100ed65vt4.pdf pdf_icon

NCE100ED65VTP

NCE100ED65VT4650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC =

 2.2. Size:1166K  ncepower
 nce100ed65vt.pdf pdf_icon

NCE100ED65VTP

NCE100ED65VT650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC =

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... BRG60N60D , BRGB6N65DP , BRGH15N120D , BRGH25N120D , NCE100ED65BT , NCE100ED65BT4 , NCE100ED65VT , NCE100ED65VT4 , BT15T120ANF , NCE100ED65VTP4 , NCE100ED75VT , NCE100ED75VT4 , NCE100ED75VTP4 , NCE100TD120BTP , NCE100TD120VTP , NCE100TD120VTP4 , NCE120ED120VTP .

History: IRGIB4630DPBF | IGW60N60H3 | KP731A | STGP19NC60H | MG25Q6ES42 | FGY100T65SCDT | APT50GS60SRDQ2G

 

 
Back to Top

 


 
.