NCE100ED75VT Todos los transistores

 

NCE100ED75VT - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE100ED75VT
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 606 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 750 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 46 nS
   Coesⓘ - Capacitancia de salida, typ: 203 pF
   Paquete / Cubierta: TO247
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NCE100ED75VT Datasheet (PDF)

 ..1. Size:811K  ncepower
 nce100ed75vt.pdf pdf_icon

NCE100ED75VT

NCE100ED75VT750V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.55V(Typ.) @ IC =

 0.1. Size:742K  ncepower
 nce100ed75vtp4.pdf pdf_icon

NCE100ED75VT

NCE100ED75VTP4750V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.55V(Typ.) @ IC

 0.2. Size:764K  ncepower
 nce100ed75vt4.pdf pdf_icon

NCE100ED75VT

NCE100ED75VT4750V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.55V(Typ.) @ IC =

 6.1. Size:1119K  ncepower
 nce100ed65vt4.pdf pdf_icon

NCE100ED75VT

NCE100ED65VT4650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC =

MOSTRAR MÁS

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: SPT40N120 | 2MBI50L-060 | FGH50T65UPD | IKZ75N65EL5 | XNS25N120T | IXBH20N300 | SGT70N65FD1P7

 

 
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