Справочник IGBT. NCE100ED75VT

 

NCE100ED75VT Даташит. Аналоги. Параметры и характеристики.


   Наименование: NCE100ED75VT
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 606 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 750 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 200 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.55 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 46 nS
   Coesⓘ - Выходная емкость, типовая: 203 pF
   Тип корпуса: TO247
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NCE100ED75VT Datasheet (PDF)

 ..1. Size:811K  ncepower
 nce100ed75vt.pdf pdf_icon

NCE100ED75VT

NCE100ED75VT750V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.55V(Typ.) @ IC =

 0.1. Size:742K  ncepower
 nce100ed75vtp4.pdf pdf_icon

NCE100ED75VT

NCE100ED75VTP4750V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.55V(Typ.) @ IC

 0.2. Size:764K  ncepower
 nce100ed75vt4.pdf pdf_icon

NCE100ED75VT

NCE100ED75VT4750V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.55V(Typ.) @ IC =

 6.1. Size:1119K  ncepower
 nce100ed65vt4.pdf pdf_icon

NCE100ED75VT

NCE100ED65VT4650V 100A Trench FS Gen.7 IGBTGeneral DescriptionUsing NCE's proprietary high density trench gate design and advanced FS(Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superiorconduction and switching performances, and easy parallel operation.Features Trench field stop Gen.7 Technology Offering Low saturation voltage: V = 1.45V(Typ.) @ IC =

ПОКАЗАТЬ ЕЩЁ

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