NCE100ED75VT - аналоги и описание IGBT

 

NCE100ED75VT - аналоги, основные параметры, даташиты

Наименование: NCE100ED75VT

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 606 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 750 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 200 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.55 V @25℃

tr ⓘ - Время нарастания типовое: 46 nS

Coesⓘ - Выходная емкость, типовая: 203 pF

Тип корпуса: TO247

 Аналог (замена) для NCE100ED75VT

- подбор ⓘ IGBT транзистора по параметрам

 

NCE100ED75VT даташит

 ..1. Size:811K  ncepower
 nce100ed75vt.pdf pdf_icon

NCE100ED75VT

NCE100ED75VT 750V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC =

 0.1. Size:742K  ncepower
 nce100ed75vtp4.pdf pdf_icon

NCE100ED75VT

NCE100ED75VTP4 750V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC

 0.2. Size:764K  ncepower
 nce100ed75vt4.pdf pdf_icon

NCE100ED75VT

NCE100ED75VT4 750V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 750V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.55V(Typ.) @ IC =

 6.1. Size:1119K  ncepower
 nce100ed65vt4.pdf pdf_icon

NCE100ED75VT

NCE100ED65VT4 650V 100A Trench FS Gen.7 IGBT General Description Using NCE's proprietary high density trench gate design and advanced FS (Field Stop) Gen.7 technology, the 650V Trench FS Gen.7 IGBT offers superior conduction and switching performances, and easy parallel operation. Features Trench field stop Gen.7 Technology Offering Low saturation voltage V = 1.45V(Typ.) @ IC =

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... BRGH15N120D , BRGH25N120D , NCE100ED65BT , NCE100ED65BT4 , NCE100ED65VT , NCE100ED65VT4 , NCE100ED65VTP , NCE100ED65VTP4 , RJP63K2DPP-M0 , NCE100ED75VT4 , NCE100ED75VTP4 , NCE100TD120BTP , NCE100TD120VTP , NCE100TD120VTP4 , NCE120ED120VTP , NCE120ED120VTP4 , NCE15T60BD .

History: NCE100TD120BTP

 

 

 

 

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